Seagate Technology Incorporated

Yuan Yan

Yiran Chen

Hai Li

Xiaobin Wang

Wenzhong Zhu

Harry Hongyue Liu

Brian Lee

Ran Wang

Haiwen Xi

Jun Zheng

Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.

Data updating in non-volatile memory

A method and apparatus for accessing a non-volatile memory cell. In some embodiments, a memory block provides a plurality of memory cells arranged into rows and columns. A read circuit is configured to read a selected row of the memory block by concurrently applying a control voltage to each memory cell along the selected row and, for each column, using a respective local sense amplifier and a column sense amplifier to successively differentiate a voltage across the associated memory cell in said column to output a programmed content of the row.

Dual stage sensing for non-volatile memory

Magnetic shift tracks or magnetic strips, to which application of a rotating magnetic field or by rotation of the strip itself allows accurate determination of domain wall movement. One particular embodiment is a method of determining a position of a domain wall in a magnetic strip. The method includes applying a rotating magnetic field to the magnetic strip, the magnetic field rotating around a longitudinal axis of the magnetic strip, and after applying the magnetic field, determining a displacement of the domain wall to a second position.

Domain wall movement on magnetic strip tracks

An apparatus and associated method for generating a reference voltage with dummy resistive sense element regions. A first resistance distribution is obtained for a first dummy region of resistance sense elements and a second resistance distribution is obtained for a second dummy region of resistive sense elements. A user resistive sense element from a user region is assigned to a selected resistive sense element of one of the first or second dummy regions in relation to the first and second resistance distributions.

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Edina, MN, United States of America

Yuan Yan