Industrial Technology Research Institute

Forhouse Corporation

Gem Line Technology Co., Ltd.

Yuan-Tung Dai

Tsung-Neng Liao

Chi-Shen Lee

Chun-Chi Lee

Chien-Chih Chen

Yuan-Ching Peng

Chih-Chiang Chen

Jiun-Jye Chang

Wen-Tung Wang

Pi-Fu Chen

Ting-Kuo Chang

Yu-Ming Kang

Guo-Ren Hu

Yew-Chung Wu

Chi-Wei Chao

Ying-Chia Chen

Yao-Lun Hsu

A method for fabricating on-chip spacers for a TFT panel exposes a photoresist layer on top of the TFT panel using two exposure processes, one through the bottom of the TFT and the other through a mask over the TFT panel. The exposure process through the bottom exposes all photoresist covering windows on the TFT panel and leaves all photoresist corresponding to an opaque grid corresponding a TFT driving circuit. A second exposure process through a mask above the photoresist leaves part of the photoresist in the opaque grid unexposed. The exposed photoresist is removed leaving on-chip spacers only on the opaque grid. Therefore, the on-chip spacers can not affect the display quality and can be easily formed on a high dpi TFT panel.

Method of fabricating on-chip spacers for a TFT panel

A method of forming a thin film transistor on a transparent plate. A silicon layer having an active area is provided. A first ion implantation is performed to form a deeper doped region in the silicon layer. A second ion implantation is performed to form a shallower doped region in part of the silicon layer. A transistor structure is formed on the silicon layer located at the active area. A glass plate is formed on the transistor structures. An annealing process whose temperature is about 200&#xb0; C.&#x2dc;600&#xb0; C. is performed to peel the silicon layer from the deeper doped region and the shallower doped region, and to form a silicon thin film adhered to the transistor structure. Thus, the silicon thin film transistor can be formed on the glass plate without a high temperature process.

Method of forming a thin film transistor on a transparent plate

A method of forming a thin film transistor on a transparent plate. A silicon layer having an active area is provided. A first ion implantation is performed to form a deeper doped region in the silicon layer. A second ion implantation is performed to form a shallower doped region in part of the silicon layer. A transistor structure is formed on the silicon layer located at the active area. A glass plate is formed on the transistor structure. An annealing process whose temperature is about 200&#xb0; C.&#x2dc;600&#xb0; C. is performed to peel the silicon layer from the deeper doped region and the shallower doped region, and to form a silicon thin film adhered to the transistor structure. Thus, the silicon thin film transistor can be formed on the glass plate without a high temperature process.

The present invention makes it possible to transfer thin film devices such as integrated semiconductor and optical components from a first substrate onto a second substrate through a thermal process at high temperature, without degradation of device performance. Other devices can be fabricated thereafter on the other side of the second substrate. Since the semiconductor and optical components can be transferred onto the second substrate in a single-step thermal process, in comparison with prior art the number of transfer substrates needed in the fabrication process can be effectively reduced, thus simplifying the fabrication process and realizing cost reduction.

Method for fabricating thin film transistor display device

A method of forming a thin film transistor on a transparent plate. A silicon layer having an active area is provided. A first ion implantation is performed to form a deeper doped region in the silicon layer. A second ion implantation is performed to form a shallower doped region in part of the silicon layer. A transistor structure is formed on the silicon layer located at the active area. A glass plate is formed on the transistor structure. An annealing process whose temperature is about 200&deg; C.&tilde;600&deg; C. is performed to peel the silicon layer from the deeper doped region and the shallower doped region, and to form a silicon thin film adhered to the transistor structure. Thus, the silicon thin film transistor can be formed on the glass plate without a high temperature process.

A full-color LED display includes red, green and blue LED elements. A first substrate is used to form red and green LED elements which are then covered by a first passivation layer. A second substrate is bonded to the passviation layer and polished as a thin substrate layer. A blue LED element is fabricated on the thin substrate layer. The three LED elements are then covered by a second passivation layer to construct a full-color LED device. A full-color, high resolution and high brightness LED display is formed by a plurality of full-color LED devices arranged in rows and columns in a matrix form.

High resolution and brightness full-color LED display manufactured using CMP technique

A method for manufacturing thin film transistor panels in order to obviate the lowstability of conventional laser annealing processes, and the resultant low quality of the produced polycrystal silicon thin film. According to the method of the invention, form a transparent insulator on the front surface of a silicon substrate. Form a thin film transistor structure and transparent electrode on the upper surface of the transparent insulator. Bond a transparent substrate onto the front surface of the silicon substrate. After that, remove a portion of the silicon substrate by polishing or etching the back of the silicon substrate to obtained a transparent thin film transistor panel. The transparent electrode can also be formed on the bottom surface of the transparent insulator. Also, the transparent substrate can be bonded onto the back of the silicon substrate. Then reduce the thickness of the silicon substrate to generate a crystal silicon thin film. Form a thin film transistor structure layer and the transparent electrode required by the thin film transistor panel on the crystal silicon thin film.

Manufacturing method of thin film transistor panel

A polysilicon thin film transistor with a self-aligned LDD structure has a polysilicon layer formed on a transparent insulating substrate. The polysilicon layer consists of a channel region, an LDD structure on two sides of the channel region, and a source/drain region on two sides of the LDD structure. A gate insulating layer is formed on the polysilicon layer, a first metal layer is patterned on the gate insulating layer to cover the channel region, and a second metal layer is patterned on the first metal layer to cover the channel region.

Method for forming polysilicon thin film transistor with a self-aligned LDD structure

A manufacturing method of a thin film transistor (TFT) having low serial impedance is described. The method uses a back-side exposure and uses the active area as a hard mask; therefore, photomask usage may be reduced. On the other hand, a Si-Ge layer is used to react with the conductive layer deposited thereon after for forming a Ge-salicide layer. The method may reduce the required temperature of forming a Ge-salicide layer and the serial impedance.

Method for manufacturing thin film transistors

A method for forming a thin film transistor (TFT) is disclosed. The invention uses metal electroless plating or chemical displacement processes to form metal clusters adjacent the sidewall of amorphous silicon active region pattern so as to crystallize the amorphous silicon amid the subsequently performed metal induced lateral crystallization (MILC) process. The amorphous silicon is crystallized to form polysilicon having parallel grains. Since the amorphous silicon will crystallize with a specific angle which is measured between the grain orientation and the side wall of the amorphous silicon, a tilt channel connecting the source and drain region of the TFT is utilized to upgrade the electron mobility across the tilt channel, wherein the grain orientation of polysilicon in the tilt channel perpendicular to a gate electrode which is subsequently formed above the tilt channel.

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Chung-Li, Taiwan

Yuan-Tung Dai