South China University of Technology

Yuan Li

Guoqiang Li

Xueqing Qiu

Dongjie Yang

Wenliang Wang

Conghua Yi

Jinhao Huang

Wenyuan Guo

Mingsong Zhou

Xiaochan Li

The present invention discloses a method for preparing a GaN rectifier suitable for operating at an alternating current frequency of 35 GHz: sequentially growing, on a silicon substrate, an N-polar GaN buffer layer, a carbon doped semi-insulated N-polar GaN layer, a non-doped N-polar AlGaN layer, a non-doped N-polar GaN layer and a non-doped N-polar InGaN thin film to obtain a rectifier epitaxial wafer; preparing a pattern groove for a schottky contact electrode on the GaN rectifier epitaxial wafer, and depositing the schottky contact electrode in the groove; preparing a pattern for an ohmic contact electrode, and depositing a device ohmic contact electrode on the surface of the epitaxial wafer; subsequently, depositing a silicon nitride passivation layer at a part where there is no electrode on the surface of the epitaxial wafer, and preparing a surface electrode area; and finally, performing mesa isolation treatment on the GaN rectifier epitaxial wafer. The present invention realizes the preparation of a high-frequency GaN rectifier, and improves the performance stability of a rectifier device operating at a high power.

Gan rectifier suitable for operating under 35GHZ alternating-current frequency, and preparation method therefor

The preparation method includes: adding an activating agent into a basic alkaline lignin solution first, then adding a carboxylating agent and reacting to obtain a carboxylated alkaline lignin; dissolving a phosphorylating agent into water, adding epichlorohydrin, and reacting to obtain a hydroxyl phosphate type compound; mixing the carboxylated alkaline lignin and the hydroxyl phosphate type compound and reacting to obtain a lignin type polymer; adding an inorganic nanoparticle suspension into the lignin type polymer and adding an acid for codeposition to obtain the product after aging and drying.

Inorganic/lignin type polymer composite nanoparticles, preparation method therefor and application thereof

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Guangzhou, China

Yuan Li