Phostek, Inc.

Uni Light Technology Inc.

Yuan-Hsiao Chang

Bor-Jen Wu

Chien-An Chen

Mei-Hui Wu

Yi-An Lu

Nae-Guann Yih

Shih Tsun Yang

Jhih-Sin Hong

A semiconductor light-emitting device includes at least one light-emitting chip. The light-emitting chip includes plural light-emitting units, which are electrically coupled to each other in series, in parallel or in series-parallel combination; a first-type electrode electrically coupled to an external power source, the first-type electrode being disposed on one of the light-emitting units; a second-type electrode disposed on another of the light-emitting units; and a tapped point for electrically coupling at least one of the light-emitting units to an electronic component.

Semiconductor light-emitting device

A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.

Semiconductor device and a method of manufacturing the same

A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.

Stacked LED device with diagonal bonding pads

A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.

Method for activating P-type semiconductor layer

An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.

Electrode structure for a light-emitting element

An LED epitaxial structure and a first electrode layer are formed on a provisional substrate in sequence. Then, a metallic permanent substrate is formed on the first electrode layer, and the provisional substrate is removed to expose a surface of the LED epitaxial structure. A plurality of second electrodes is formed on the surface of the LED epitaxial structure. Finally, the metallic permanent substrate, the first electrode layer, and the LED epitaxial structure are diced to form a plurality of LED devices.

Growing community of inventors

Taipei, Taiwan

Yuan-Hsiao Chang