Semileds Optoelectronics Co., Ltd.

Sino-american Silicon Products Inc.

Yuan-Hsiao Chang

Wen-Huang Liu

Chen-Fu Chu

Feng-Hsu Fan

Hao-Chun Cheng

Chao-Chen Cheng

Jiunn-Yi Chu

Hung-Jen Kao

Chung-Che Dan

Ying-Ru Shih

Wen-Huai Yu

Sung-Lin Hsu

Yu-Min Yang

Cheng-Jui Yang

Bo-Kai Wang

Ching-Hung Weng

An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm&#xb7;cm (&#x3a9;&#xb7;cm), the slope of resistivity is 0 to &#x2212;1.8 at the solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentage is less than 2.5 at the solidified fraction of 0.4 to 0.8.

N-type polysilicon crystal, manufacturing method thereof, and N-type polysilicon wafer

Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Method for guiding current in a light emitting diode (LED) device

The invention relates to a wafer-type light emitting device having a substrate, one or more light emitting semiconductors formed on the substrate, one or more frames provided over the one or more light emitting semiconductors, and one or more wavelength-converting layers applied on the one or more light emitting semiconductors and confined by the one or more frames, wherein the wafer-type light emitting device is diced into a plurality of separate light emitting units.

Wafer-type light emitting device having precisely coated wavelength-converting layer

The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.

Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof

Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Vertical LED with current-guiding structure

Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Vertical LED with current guiding structure

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Daya, Taiwan

Yuan-Hsiao Chang