Micron Technology Incorporated

Nan Ya Technology Corporation

Yuan He

Yutaka Ito

Scott L Light

Michael D Hyatt

Jianming Zhou

Dan B Millward

Kaveri Jain

Zishu Zhang

Anton J deVillers

Fatma Arzum Simsek-Ege

Yasuo Satoh

Lijing Gou

Hiroshi Akamatsu

Tae Hyoung Kim

Daigo Toyama

Takamasa Suzuki

Jiyun Li

Yu Zhang

Scott James Derner

Chikara Kondo

Beau D Barry

Hyunui Lee

Sang-Kyun Park

Hong Chen

Toru Ishikawa

Liang Li

Hiroki Takahashi

Shuichi Tsukada

Masaru Morohashi

Ming-Bo Liu

Ryo Nagoshi

Michael A Many

Dong Pan

George B Raad

Christopher John Kawamura

Sujeet V Ayyapureddi

Jongtae Kwak

Yoshinori Fujiwara

David A Kewley

Takehiro Hasegawa

Craig A Hickman

Anton J De Villiers

Tim H Bossart

Luoqi Li

Pu Yang

Huipeng Ba

Methods, systems, and devices for sensing a memory with shared sense components are described. A device may activate a word line and a plate line each coupled with a set of memory cells, where each memory cell of the set of memory cells is coupled with a respective digit line of a set of digit lines. The device may activate a set of switching components to couple each digit line of the set of digit lines with a respective sense component of a set of sense components, where each switching component of the set of switching components is coupled with a respective memory cell of the set of memory cells. The device may sense the set of memory cells based on activating the word line and the plate line and based on coupling the set of digit lines with the set of sense components.

Sensing scheme for a memory with shared sense components

Methods, systems, and devices for circuit for tracking access occurrences are described. For instance, a memory device may include a memory array with column lines extending in a first direction and row lines extending in a second direction. The memory device may include a set of sense amplifiers adjacent to the memory array in the first direction, where a first subset of the set of sense amplifiers is coupled with the first set of column lines and a second subset of the set of sense amplifiers is coupled with the second set of column lines. The memory device may include a circuit adjacent to the set of sense amplifiers along the second direction, where the circuit is configured to increment, based on the access operation for the row line, a value including the logic states read by the second subset of the set of sense amplifiers.

Circuit for tracking access occurrences

A microelectronic device comprises a first control logic region comprising first control logic devices and a memory array region vertically overlying the first control logic region. The memory array region comprises capacitors, access devices laterally neighboring and in electrical communication with the capacitors, conductive lines operatively associated with the access devices and extending in a lateral direction, and first conductive pillars operatively associated with the access devices and vertically extending through the memory array region. The microelectronic device further comprises a second control logic region comprising second control logic devices vertically overlying the memory array region. Related microelectronic devices, memory devices, electronic systems, and methods are also described.

Microelectronic devices, and methods of forming microelectronic devices

A microelectronic device is disclosed that includes array regions individually comprising memory cells comprising access devices and storage node devices; digit lines coupled to the access devices and extending in a first direction; and word lines coupled to the access devices and extending in a second direction orthogonal to the first direction, and the word lines extend into word line exit regions. The word line exit regions are horizontally alternating with the array regions in the second direction; and sub word line driver sections are overlapping and above, and in electrical communication with the word line exit regions. Electrical communication between word lines in the word line exit regions and the sub word line driver sections vertically coupled with a vertical word line contact and other interconnections is laterally bounded within socket regions delineated by horizontal boundaries of the word line exit regions.

Microelectronic devices including control logic circuitry overlying memory arrays, and related memory devices and electronic systems

Fin field effect transistor (FinFET) sense amplifier circuitry and related apparatuses and computing systems are disclosed. An apparatus includes a pull-up sense amplifier, a pull-down sense amplifier, column select gates, global input-output (GIO) lines, and GIO pre-charge circuitry. The pull-up sense amplifier includes P-type FinFETs having a first threshold voltage potential associated therewith. The pull-down sense amplifier includes N-type FinFETs having a second threshold voltage potential associated therewith. The second threshold voltage potential is substantially equal to the first threshold voltage potential. The GIO lines are electrically connected to the pull-up sense amplifier and the pull-down sense amplifier through the column select gates. The GIO pre-charge circuitry is configured to pre-charge the GIO lines to a low power supply voltage potential.

Fin field effect transistor sense amplifier circuitry and related apparatuses and computing systems

Some embodiments include an integrated assembly having a CMOS-containing base containing wordline-driver-circuitry. The wordline-driver-circuitry is subdivided amongst horizontally-extending sub-wordline-driver (SWD) units. Memory cells are over the base, and are arranged in vertically-extending rows. Each of the memory cells includes an access device and a storage element coupled with the access device. Wordlines extend vertically along the rows. Each of the SWD units is associated with at least two of the wordlines and is configured to simultaneously activate the associated wordlines.

Integrated assemblies having wordline-driver-circuitry directly under vertically-extending wordlines

Apparatuses and methods for row hammer counter mat. A memory array may have a number of memory mats and a counter memory mat. The counter mat stores count values, each of which is associated with a row in one of the other memory mats. When a row is accessed, the count value is read out, changed, and written back to the counter mat. In some embodiments, the count value may be processed within access logic of the counter mat, and a row hammer flag may be provided to the bank logic. In some embodiments, the counter mat may have a folded architecture where each sense amplifier is coupled to multiple bit lines in the counter mat. The count value may be used to determine if the accessed row is an aggressor so that its victims can be refreshed as part of a targeted refresh.

Apparatuses and methods for row hammer counter mat

Apparatuses including a level shifter circuit are disclosed. An example apparatus according to the disclosure includes a plurality of array access control circuits and a level shifter circuit. The plurality of array access control circuits receive an access control signal and a respective plurality of section enable signals. An array access control circuit of the plurality of array access control circuits provides a section access control signal responsive to the access control signal when a respective section enable signal is in an active state. The level shifter circuit receives a control signal and provides an access control signal responsive to the first signal. A first logic level of the control signal is represented by a first power supply voltage and a first logic level of the access control signal is represented by a second power supply voltage greater than the first power supply voltage.

Apparatuses for sense amplifier voltage control

Multi-level cells, and related methods, arrays, devices, and systems, are described. A device may include a memory array including a first reference section including a first number of memory cells and a first reference digit line. The memory array may also include a second reference section including a second number of memory cells and a second reference digit line. The memory array may also include a target section including a memory cell. The target section may further include a first digit line coupled to the memory cell via a first switch, wherein the first digit line is further coupled to the first reference digit line via a first sense amplifier. The target section may also include a second digit line coupled to the first digit line via a second switch, wherein the second digit line is further coupled to the second reference digit line via a second sense amplifier.

Multi-level cells, and related arrays, devices, systems, and methods

A microelectronic device comprises array regions individually comprising memory cells comprising access devices and storage node device, digit lines coupled to the access devices and extending in a first direction, word lines coupled to the access devices and extending in a second direction orthogonal to the first direction, and control logic devices over and in electrical communication with the memory cells. The microelectronic device further comprises capacitor regions horizontally offset from the array regions in the first direction and having a dimension in the second direction greater than each individual array region in the second direction. The capacitor regions individually comprise additional control logic devices vertically overlying the memory cells, and capacitor structures within horizontal boundaries of the additional control logic devices. Related microelectronic devices, electronic systems, and methods are also described.

Microelectronic devices comprising capacitor structures, and related electronic systems and methods

Apparatuses, systems, and methods for access based targeted refresh operations. A memory bank has a first sub-bank and a second sub-bank. A refresh control circuit detects an aggressor in one of the sub-banks. Responsive to an access in the other sub-bank, the refresh control circuit performs a targeted refresh operation based on the sub-bank based on the aggressor address.

Apparatuses and methods for access based targeted refresh operations

Methods, systems, and devices for vertical transistor fuse latches are described. An apparatus may include a substrate and a memory array that is coupled with the substrate. The apparatus may also include a latch that is configured to store information from a fuse for the memory array. The latch may be at least partially within an additional substrate separate from and above the substrate. The latch may include a quantity of p-type vertical transistors and a quantity of n-type vertical transistors each at least partially disposed within the additional substrate above the substrate.

Vertical transistor fuse latches

An exemplary register circuit includes a plurality of slots to store respective addresses and data pairs. During a write operation, each slot of a plurality of slots preceding a particular slot of the plurality of slots indicated as empty is shifted by one slot to fill the particular slot such that a first end slot of the plurality of slots is made available to receive a new write address and data pair. Each slot of the plurality of slots subsequent to the particular slot retains existing address and data pairs.

Bubble break register in semiconductor device

Apparatuses, systems, and methods for accurate bias temperature instability (BTI) mitigation. During a first period a signal is provided to a path of a device, and during a second period a BTI toggle signal is provided to the path. During the first period a ratio of the time that the signal is active or inactive is measured. During the second period the BTI toggle signal is provided with a duty cycle based on the measured ratio. The duty cycle may be higher if the measured ratio is lower and lower if the measured ratio was higher.

Apparatuses and methods for accurate bias temperature instability mitigation

Methods, systems, and devices for testing operations for memory systems are described. A memory system may include a first circuit and a second circuit configured to test one or more counters tracking the quantity of activates to respective rows of memory cells. In some examples, the memory system may initiate an operation to validate a counter of the memory system. The first circuit may determine if a value of the counter is correct by comparing a set of counter bits representing the value of the counter to a set of parity bits. Subsequently, the second circuit may determine if the counter is incrementing correctly in accordance with a set quantity of activates to the corresponding row of memory cells. If the first circuit or the second circuit detect an error associated with the counter, the memory system may discard the row of memory cells associated with the faulty counter.

Testing operations for memory systems

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Boise, ID, United States of America

Yuan He