Taiwan Semiconductor Manufacturing Comp. Ltd.

Yuan-Fu Shao

Clement Hsingjen Wann

Ling-Yen Yeh

Chi-Yuan Shih

Yasutoshi Okuno

Wei-Chun Tsai

Tung Ying Lee

Wen-Huei Guo

A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.

Methods for probing semiconductor fins through four-point probe and determining carrier concentrations

An apparatus includes a semiconductor substrate having a plurality of fins, wherein the plurality of fins includes a first group of fins and a second group of fins. The apparatus further includes a high fin density area on the semiconductor substrate including a first dielectric between the first group of fins in the high fin density area, said first dielectric having a first dopant concentration. The apparatus further includes a low fin density area on the semiconductor substrate including a second dielectric between the second group of fins in the low fin density area, said second dielectric having a second dopant concentration. The first dielectric and the second dielectric are a same material as deposited and the first dopant concentration and the second dopant concentration are different.

Fin field-effect transistors having controlled fin height

Methods for probing semiconductor fins and determining carrier concentrations therein

Calculating carrier concentrations in semiconductor Fins using probed resistance

A semiconductor apparatus includes fin field-effect transistor (FinFETs) having controlled fin heights. The apparatus includes a high fin density area and a low fin density area. Each fin density area includes fins and dielectric material between the fins. The dielectric material includes different dopant concentrations for different fin density areas and is the same material as deposited.

Method of forming fin field-effect transistors having controlled fin height

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Taipei, Taiwan

Yuan-Fu Shao