Advanced Semiconductor Engineering, Inc.

Yuan-Feng Chiang

Ya Fang Chan

Po-Wei Lu

Wen-Long Lu

Min Lung Huang

Tsung-Tang Tsai

Peng Yang

Chi-Chang Lee

Huang-Hsien Chang

Wei-Min Hsiao

Tai-Yuan Huang

Chung-Hsi Wu

Shih-Yu Wang

Shao-An Chen

Chun-Wei Shih

Chin-Feng Wang

Shao-Ci Huang

Kun-Ming Chen

Cong-Wei Chen

I-Ting Chi

Chuan-Yung Shih

Kuoching Cheng

Yu-Chi Wang

Sing-Syuan Shiau

A semiconductor device package includes a redistribution layer, a plurality of conductive pillars, a reinforcing layer and an encapsulant. The conductive pillars are in direct contact with the first redistribution layer. The reinforcing layer surrounds a lateral surface of the conductive pillars. The encapsulant encapsulates the first redistribution layer and the reinforcing layer. The conductive pillars are separated from each other by the reinforcing layer.

Semiconductor device package with conductive pillars and reinforcing and encapsulating layers

The present disclosure provides a semiconductor device package. The semiconductor device package includes a dielectric layer. The semiconductor device package further includes an antenna structure disposed in the dielectric layer. The semiconductor device package further includes a semiconductor device disposed on the dielectric layer. The semiconductor device package further includes an encapsulant covering the semiconductor device. The semiconductor device package further includes a conductive pillar having a first portion and a second portion. The first portion surrounded by the encapsulant and the second portion embedded in the dielectric layer.

Semiconductor device package and the method of manufacturing the same

A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

Semiconductor device package and a method of manufacturing the same

An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.

Electronic device package

According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.

Method for manufacturing a through substrate via

A semiconductor heat dissipation structure includes a first semiconductor device including a first active surface and a first back surface opposite to the first active surface, a second semiconductor device including a second active surface and a second back surface opposite to the second active surface, a first heat conductive layer embedded in the first back surface of the first semiconductor device, a second heat conductive layer embedded in the second back surface of the second semiconductor device, and a third heat conductive layer disposed adjoining the first heat conductive layer and extending to the first active surface of the first semiconductor device. The first back surface of the first semiconductor device and the second back surface of the second semiconductor device are in contact with each other. At least a portion of the first heat conductive layer are in contact with the second heat conductive layer.

Semiconductor package structure and method of manufacturing the same

Collimator, optical device and method of manufacturing the same

In one or more embodiments, an apparatus for processing a wafer includes a ceramic wall, a metal wall and a frame. The ceramic wall defines a chamber for accommodating the wafer. The ceramic wall has a first surface defining a first opening. The metal wall surrounds the ceramic wall. The metal wall has a second surface defining a second opening adjacent to the first opening. The frame covers the second surface.

Semiconductor package device and method of manufacturing the same

An interposer comprises a first conductive wire having a first terminal and a second terminal, a first oxide layer, and an encapsulant. The first oxide layer covers the first conductive wire and exposes the first terminal and the second terminal of the first conductive wire. The encapsulant covers the first oxide layer and exposes the first terminal and the second terminal of the first conductive wire.

Interposer and semiconductor package device

A semiconductor package structure includes a semiconductor substrate, at least one semiconductor die, an encapsulant, a protection layer, a plurality of conductive elements and a redistribution layer. The semiconductor die is disposed on the semiconductor substrate. The encapsulant covers at least a portion of the semiconductor die, and has a first surface and a lateral surface. The protection layer covers the first surface and the lateral surface of the encapsulant. The conductive elements surround the lateral surface of the encapsulant. The redistribution layer electrically connects the semiconductor die and the conductive elements.

Semiconductor package structure having a protection layer

A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first main body, at least one first columnar portion and at least one first conductive layer. The first columnar portion protrudes from a bottom surface of the first main body. The first conductive layer is disposed on a side surface of the first columnar portion. The second semiconductor device includes a second main body, at least one second columnar portion and at least one second conductive layer. The second columnar portion protrudes from a top surface of the second main body. The second conductive layer is disposed on a side surface of the second columnar portion. The first conductive layer is electrically coupled to the second conductive layer.

Semiconductor package, interposer and semiconductor process for manufacturing the same

A semiconductor package structure includes a conductive structure, at least two semiconductor elements and an encapsulant. The conductive structure has a first surface and a second surface opposite the first surface. The semiconductor elements are disposed on and electrically connected to the first surface of the conductive structure. The encapsulant covers the semiconductor elements and the first surface of the conductive structure. The encapsulant has a width 'L' and defines at least one notch portion. A minimum distance 'd' is between a bottom surface of the notch portion and the second surface of the conductive structure. The encapsulant has a Young's modulus &#x2018;E&#x2019; and a rupture strength &#x2018;S&#x2019;, and L/(K&#xd7;d)&#x3e;E/Sr, wherein &#x2018;K&#x2019; is a stress concentration factor with a value of greater than 1.2.

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Kaohsiung, Taiwan

Yuan-Feng Chiang