Foxsemicon Integrated Technology, Inc.

Yuan-Fa Chu

Wen-Jang Jiang

Chuan-Fu Yang

Kun-Sheng Kuo

Hung-Kuang Hsu

An exemplary outdoor lamp includes a light source, a light-pervious cover, and a heating element. The light source is configured for emitting light. The light-pervious cover is for transmission of the light emitted from the light source therethrough. The heating element is in thermal contact with the light-pervious cover and is configured for heating the light-pervious cover.

Anti-icing outdoor lamp

An exemplary light emitting diode (LED) assembly includes a cover, a substrate, a LED unit, a first electrode terminal, and a second electrode terminal. The substrate includes a first surface and a second surface on an opposite side of the substrate thereto. The substrate and the cover cooperatively define a cavity. The LED unit is received in the cavity. The first and the second electrode terminals extend from the second surface. The first electrode terminal is electrically connected to one of a positive lead and a negative lead of the LED unit and the second electrode terminal is electrically connected to the other. The second electrode terminal includes a first electrode portion and a second electrode portion symmetrically arranged at opposite sides of the first electrode terminal. The first and the second electrode portions are at least partially symmetrical with respect to the first electrode terminal.

Light emitting diode assembly and light emitting diode display device

A lamp assembly () is provided. The lamp assembly includes a lamp cover () having a first end () and an opposite second end (). The lamp cover tapers from the second end to the first end. A hydrophobic coating () is formed on and covers an outer surface of the lamp cover. A light source () is received in the lamp cover.

Lamp assembly

The present invention relates to a light source assembly and a backlight module including the same. The light source assembly () includes a light source () and a light guide plate (). The light source () includes a light-emitting layer (). The light source assembly () further includes a transparent filling layer () is interposed between the light source () and the light guide plate (). The light source assembly () can reduce reflection and refraction loss when the light beam enters the light guide plate ().

Light source assembly and backlight module having the same

An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure is formed on the substrate and includes a first-type semiconductor layer and a second-type semiconductor layer. The first electrode is electrically connected with the first-type semiconductor layer. The second electrode includes a transparent conductive layer formed on the second-type semiconductor layer and a metallic conductive layer formed on a region of the transparent conductive layer and in electrical contact therewith. Any point on the region is no more than 300 micrometers from a nearest part of the metallic conductive layer, and an exposed portion uncovered by the metallic conductive layer of the region has an area of at least 80% of a total area of the transparent conductive layer.

Light emitting device with high light extraction efficiency

A light source module includes a plurality of light emitting diodes (), a heat dissipation device () and a thermoelectric cooler () having a cold side () and a hot side (). The light emitting diodes thermally contact with the cold side of the thermoelectric cooler. The heat dissipation device thermally contacts with the hot side of the thermoelectric cooler.

Light source module

A light emitting diode () includes a first and a second semiconductor structures (), and an adhesive layer () between the first and the second semiconductor structures. The first semiconductor structure includes a n-type AlGaInP cladding layer (), a p-type AlGaInP cladding layer (), an AlGaInP active layer () between the n-type and the p-type AlGaInP cladding layers, a transparent conducting layer () on the n-type AlGaInP cladding layer, a first electrical contact () on the transparent conducting layer, ohmic electrodes () ohmic contact the p-type AlGaInP cladding layer, and a reflecting layer () on an opposite side of the p-type AlGaInP cladding layer to the AlGaInP active layer. The second semiconductor structure includes a carrier substrate (), an ohmic contact layer () on the carrier substrate, and a second electrical contact () on an opposite side of the carrier substrate to the ohmic contact layer.

Growing community of inventors

Miao-Li Hsien, Taiwan

Yuan-Fa Chu