Qualcomm Incorporated

Yuan-Cheng Pan

Mikhail Popovich

Junmou Zhang

Reza Jalilizeinali

Boris Andreev

A block power switch may be embedded with electrostatic discharge (ESD) protection circuitry. A transistor portion of the block power switch may be allocated to act as part of ESD protection circuitry and may be combined with an RC clamp to provide ESD protection. Adaptive body biasing (ABB) may be applied to the block power switch to reduce on-chip area and decrease leakage current of the block power switch.

Block power switch with embedded electrostatic discharge (ESD) protection and adaptive body biasing

A system and method to regulate voltage is disclosed. In a particular embodiment, a voltage regulator includes an error amplifier, a voltage buffer responsive to the error amplifier, and a first transistor responsive to the voltage buffer and coupled to a voltage supply source. A second transistor is coupled to the voltage supply source and further coupled to an output node. A third transistor is coupled to the first transistor and has a gate coupled to a capacitor. The capacitor is coupled to a node between the error amplifier and the voltage buffer.

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Portland, OR, United States of America

Yuan-Cheng Pan