Industrial Technology Research Institute

Yuan-Chang Fann

Chun-Mu Chen

Cheng-Chou Wong

Jen-Dong Hwang

Chih-Hao Chang

Jeng-Maw Chiou

Jenn-Dong Hwang

Bee-Yu Wei

Tse-Hsiao Lee

Chih-Tsung Tu

Molybdenum-silicon carbide composite powder and a fabrication method thereof are provided. The molybdenum-silicon carbide composite powder includes a micro-scale silicon carbide powder and a plurality of submicron-scale molybdenum particles bonding on the surface of the silicon carbide powder.

Molybdenum-silicon carbide composite powder and a fabricating method thereof

The disclosure provides a thermoelectric module and a method for fabricating the same. The thermoelectric module includes a plurality of p-type and n-type segmented thermoelectric elements disposed in a planar array, wherein the p-type and n-type segmented thermoelectric elements are coupled in series via a plurality of first electrodes and second electrodes. Each segmented thermoelectric element includes at least two vertically homogeneous thermoelectric segments, and at least two adjacent thermoelectric segments have a fusion-bonding layer therebetween. The fusion-bonding layer includes a tin-containing material and a plurality of spacers disposed among the tin-containing material, wherein the melting point of the spacers is higher than the liquidus temperature of the tin-containing material.

Thermoelectric module and method of fabricating the same

The invention provides a metal thermal interface material (TIM) with through-holes in its body and/or zigzags or wave shapes on its border, which is suitable for use at thermal interfaces of a thermal conduction path from an integrated circuit die to its associated heat sink in a packaged microelectronic component. The invention also includes a thermal module and a packaged microelectronic component including the metal thermal interface material.

Metal thermal interface material and thermal module and packaged microelectronic component containing the material

A melting temperature adjustable metal thermal interface material (TIM) and a packaged semiconductor including thereof are provided. The metal TIM includes about 20-98 wt % of In, about 0.03-4 wt % of Ga, and at least one element of Bi, Sn, Ag and Zn. The metal TIM has an initial melting temperature between about 60-144&#xb0; C.

Melting temperature adjustable metal thermal interface materials and packaged semiconductors including thereof

A melting temperature adjustable metal thermal interface material (TIM) is provided. The metal TIM includes In, Bi, Sn, and Ga. A content of Ga ranges from 0.01 wt % to 3 wt %. The metal TIM has an initial melting temperature lower than 60&#xb0; C. and has no element hazardous to the environment.

Melting temperature adjustable metal thermal interface materials and application thereof

A two-step two-piece high-pressure casting process for the fabrication of a scroll member containing a generally circular end plate, a scroll hub on one side of the end plate and an involute wrap on the other side thereof. The involute wrap is pre-fabricated from a wear-resistant alloy or aluminum alloy based composite having low liquidus temperature which is placed inside the involute groove of a scroll mold. The scroll mold contains a mobile scroll mold and a stationary scroll mold. The mobile scroll mold contains a first cavity having the shape of the scroll hub; whereas the stationary scroll mold contains a second cavity having the shape of the circular end plate and an involute groove disposed below the second cavity. A molten aluminum alloy or aluminum alloy based composite is injected into the first and second mold cavities which, after solidifies, becomes the scroll hub and the end plate is respective positions whereby a metallurgical bonding will be developed between the end plate and the involute wrap to ensure the integrity of the scroll member. The involute groove has a depth shorter than the height of the involute wrap to increase the area of metallurgical bonding between the end plate and the involute wrap.

Growing community of inventors

Hsinchu County, Taiwan

Yuan-Chang Fann