Jiangsu Advanced Memory Technology Co., Ltd.

Jiangsu Advanced Memory Semiconductor Co., Ltd.

Yu Zhu

Chung-Hon Lam

Kuo-Feng Lo

Chieh-Fang Chen

A method of manufacturing a diode structure includes forming a first stack on a silicon layer on a substrate. A first sidewall spacer extending along and covering a sidewall of the first stack is formed. The silicon layer is selectively etched to a first predetermined depth, thereby forming a second stack. The remaining silicon layer includes a silicon base. A second sidewall spacer extending along and covering a sidewall of the second stack is formed. The silicon base is selectively etched to form a third stack on the substrate. With the second sidewall spacer as a mask, lateral plasma ion implantation is performed. Defects at the interface between two adjacent semiconductor layers can be reduced by the method.

Method of fabricating diode structure

A method of manufacturing a phase change memory includes: forming a stacked structure including a conductive layer, a lower electrode layer over the conductive layer, an upper electrode layer, a phase change material between the lower and upper electrode layers, and a selector material between the conductive layer and the lower electrode layer; etching the upper electrode layer to form an upper electrode wire; etching the phase change material according to the upper electrode wire to form a phase change material layer and expose a portion of the lower electrode layer, wherein the phase change material layer has an exposed side surface; after etching the phase change material, performing a nitridizing treatment on the side surface of the phase change material layer to form a nitridized phase change material layer covering the same; and etching the lower electrode layer, the selector material and the conductive layer.

Method of manufacturing phase change memory and phase change memory

A method of manufacturing a phase change memory includes: forming a stacked structure including a conductive layer; a lower electrode layer over the conductive layer; an upper electrode layer over the lower electrode layer; and a phase change material between the lower and upper electrode layers; etching the upper electrode layer according to a first mask to form an upper electrode wire; simultaneously etching the phase change material according to the upper electrode wire and performing a nitridizing treatment in a same plasma etching chamber until a phase change material layer and a nitridized phase change material layer are formed beneath the upper electrode wire and a portion of the lower electrode layer is exposed, wherein the nitridized phase change material layer covers a side surface of the phase change material layer; and removing the portion of the lower electrode layer and the conductive layer therebeneath.

Growing community of inventors

Hsinchu County, Taiwan

Yu Zhu