Sharp Kabushiki Kaisha Corporation

Yu Zhu

Masafumi Shimizu

Yoshiteru Ishimaru

Naoki Takahashi

A method for analyzing a Schottky junction of the present invention includes the step of obtaining electrical field dependence of the Schottky barrier height which shows a degree of dependence of the Schottky barrier height of the Schottky junction formed on a semiconductor wafer on an electrical field applied to an interface of the Schottky junction in a case where a reverse bias is applied to the Schottky junction. The method includes the steps of: applying the reverse bias of a plurality of voltage values to the Schottky junction; measuring a plurality of current values of a current flowing through the Schottky junction and a plurality of capacitance values of the Schottky junction, corresponding to the reverse bias of the plurality of voltage values; obtaining current-voltage characteristics and capacitance-voltage characteristics of the Schottky junction based on the plurality of current values and the plurality of capacitance values; calculating depletion layer charge-voltage characteristics showing a correlation between an accumulated charge in a depletion layer and a voltage by integrating the capacitance-voltage characteristics with respect to a voltage; and obtaining the electrical field dependence of the Schottky barrier height based on the current-voltage characteristics and the depletion layer charge-voltage characteristics.

Method for analyzing schottky junction method for evaluating semiconductor wafer method for evaluating insulating film and schottky junction analyzing apparatus

A method for analyzing a Schottky junction includes the step of obtaining electrical field dependence of the Schottky barrier height which shows a degree of dependence of the Schottky barrier height of the Schottky junction formed on a semiconductor wafer on an electrical field applied to an interface of the Schottky junction in a case where a reverse bias is applied to the Schottky junction. The method includes the steps of: applying the reverse bias of a plurality of voltage values to the Schottky junction; measuring a plurality of current values of a current flowing through the Schottky junction and a plurality of capacitance values of the Schottky junction, corresponding to the reverse bias of the plurality of voltage values; obtaining current-voltage characteristics and capacitance-voltage characteristics of the Schottky junction based on the plurality of current values and the plurality of capacitance values; calculating depletion layer charge-voltage characteristics showing a correlation between an accumulated charge in a depletion layer and a voltage by integrating the capacitance-voltage characteristics with respect to a voltage; and obtaining the electrical field dependence of the Schottky barrier height based on the current-voltage characteristics and the depletion layer charge-voltage characteristics.

Method for analyzing Schottky junction, method for evaluating

A heterojunction semiconductor device includes a first Schottky contact layer made of a first semiconductor, a second Schottky contact layer made of a second semiconductor and a metal electrode. The first Schottky contact layer, the second Schottky contact layer and the metal electrode are laminated in this order on a semiconductor substrate or on a main structure of a semiconductor device laminated on a semiconductor substrate from the substrate side or from the main structure side. The first Schottky contact layer serves as a barrier layer toward the second Schottky contact layer, and a layer thickness of the second Schottky contact layer is greater than the mean free pass of carriers in the second Schottky contact layer.

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Soraku-gun, Japan

Yu Zhu