Hitachi High-tech Corporation

Disco Corporation

Hitachi Systems, Ltd.

Hitachi Energy Ltd

Yu Zhao

Masaki Yamada

Katsuya Miura

Hirotaka Hamamura

Kiyohiko Sato

Hiroyuki Kobayashi

Masato Nakamura

Takashi Hattori

Makoto Satake

Yoshihito Narita

Kentarou Oonishi

Hiroto Otake

Jun-ichiro Watanabe

Ryouichi Ueda

A wafer has a substrate and a functional layer disposed on the substrate along a plurality of projected dicing lines. A method of processing the wafer includes applying a laser beam to the wafer along the projected dicing lines to remove portions of the functional layer, forming processed grooves in the functional layer through which the substrate is exposed, removing damaged regions produced in an interface between the substrate and the functional layer by the laser beam, and forming recesses extending outwardly from side surfaces of the processed grooves, a recess exposing step of removing portions of the functional layer that overhang the recesses, thereby exposing the recesses, and processing the substrate along the projected dicing line after the recess exposing step has been carried out.

Method of processing wafer

The present invention provides a plasma processing technology of applying isotropic dry etching to SiGe that does not allow etching amounts of respective SiGe layers to depend on a depth of a laminated structure in a laminated structure in which Si layers and the SiGe layers are stacked alternately and repeatedly. The present invention provides a plasma processing technology of repeating plasma oxidation using an oxygen (O) element containing gas and plasma etching using a fluorine (F) element and carbon (C) element containing gas in a plasma processing method of isotropically etching respective SiGe layers selectively to respective Si layers in a structure in which the Si layers and the SiGe layers are stacked alternately and repeatedly.

Plasma processing method and manufacturing method of semiconductor device

Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of −20° C. or lower, preferably −20° C. to −60° C., and etching the silicon oxide film from the end portion in a lateral direction.

Etching method

Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first stepof etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second stepof simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.

Method of manufacturing magnetic tunnel junction and magnetic tunnel junction

The present invention relates to an aircraft-utilizing deterioration diagnostic system and provides a technique capable of improving diagnostic efficiency and accuracy when comparing the previous and current aerially-photographed images to diagnose a deteriorated state of a target. The diagnostic system includes: a drone(aircraft) configured to be navigated along a route around a targetand having a cameraconfigured to photograph the target; and a computer (PCand server) configured to control navigation of the aircraft and photographing by the camera. The computer is configured to: acquire data from the aircraft including an image group obtained by consecutively photographing the targetfor each predetermined date and time; based on diagnostic data including a diagnostic image group photographed at a current date and time, reference data including a reference image group of a previous date and time, associate, for the same target, images including the same portion as comparison target images; compare the previous image and the current image among the comparison target images to detect a deteriorate portion; and provide a screen converted and visualized for the user such that the deteriorated portion in the image is plotted on the three-dimensional model of the target.

Aircraft-utilizing deterioration diagnosis system

To provide a magnetic tunnel junction (MTJ) element that is adapted to suppress the degradation of magnetic properties of a magnetic tunnel junction layer due to plasma CVD layer formation and adapted for miniaturization. The MTJ element includes a magnetic tunnel junction layer () and a plurality of passivation layers formed on a side wall of the magnetic tunnel junction layer. The plurality of passivation layers are SiN layers formed under different plasma CVD layer forming conditions and include a first passivation layerformed in direct contact with the magnetic tunnel junction layer. A hydrogen ion density or hydrogen ion energy of a layer forming condition for the first passivation layer is lower than a hydrogen ion density or hydrogen ion energy of a layer forming condition for the other of the plural passivation layers. The other passivation layers include a passivation layer, a nitrogen density of which is higher than a nitrogen density of the first passivation layer.

Magnetic tunnel junction element, magnetic memory using the same, and manufacture method of magnetic tunnel junction element

Growing community of inventors

Tokyo, Japan

Yu Zhao