Playnitride Display Co., Ltd.

Yu-Yun Lo

Bo-Wei Wu

Shiang-Ning Yang

Chang-Feng Tsai

Yi-Min Su

Chih-Ling Wu

Yi-Chun Shih

Tzu-Yang Lin

Sheng-Chieh Liang

Sheng-Yuan Sun

Yen-Yeh Chen

Gwo-Jiun Sheu

Ying-Ting Lin

Shih-Yao Liang

Chien-Chen Kuo

Yi-Ching Chen

Kuan-Yung Liao

Pei-Hsin Chen

Yu-Hung Lai

Yu-Chu Li

Ying-Tsang Liu

Loganathan Murugan

Yung-Chi Chu

Huan-Pu Chang

Yu-Ya Peng

Hsiang-Wen Tang

Chih-Kai Huang

Tzu-Yu Ting

A micro LED display device includes a circuit substrate, an epitaxial structure layer and a metal reflective layer. The circuit substrate includes a display area and a non-display area adjacent to the display area. The epitaxial structure layer includes a first surface facing the circuit substrate, a second surface away from the circuit substrate, and a plurality of ion implantation regions facing the circuit substrate. The ion implantation regions define a plurality of micro LED units spaced apart from each other. The first surface is a planar surface within the display area, and each groove in the second surface corresponds to one of the ion implantation regions. The metal reflective layer includes a plurality of reflective portions corresponding to the grooves. The reflective portions define a plurality of light transmission regions, and each light transmission region corresponds to one of the micro LED units.

Micro LED display device

A micro device includes an epitaxial structure, an overcoat layer, and a first light-guiding structure. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The insulating layer covers at least the bottom surface and part of the peripheral surface of the epitaxial structure. The overcoat layer includes a contact portion and an extension portion. The contact portion conformally covers the insulating layer and the peripheral surface and the bottom surface of the epitaxial structure, and the extension portion connects the contact portion and extends in a direction away from the peripheral surface. The display apparatus includes a circuit substrate and a plurality of the above-mentioned micro devices. The micro devices are disposed and are correspondingly electrically connected to the first pads and the second pads of circuit substrate.

Micro device and display apparatus

A micro light-emitting display device having multiple display regions is provided. The micro light-emitting display device includes a substrate, multiple micro light-emitting elements, and multiple first light-emitting auxiliary structures. The micro light-emitting elements are disposed on the substrate, and positions of the micro light-emitting elements define ranges of the display regions. The micro light-emitting elements have a same first pitch between each other in any one of the display regions. The micro light-emitting elements have a second pitch between each other at a boundary across any two adjacent display regions. The first pitch is different from the second pitch. The light-emitting auxiliary structures are respectively disposed on the micro light-emitting elements. The light-emitting auxiliary structures have a same third pitch between each other.

Micro light-emitting display device

A micro light emitting device structure includes a substrate, a connecting layer, a micro light emitting device and a covering layer. The connecting layer is connected to the substrate. The micro light emitting device is removably connected to the connecting layer, and includes a semiconductor epitaxial structure and two electrodes. The semiconductor epitaxial structure has an outer surface. The electrodes are disposed on a first surface of the outer surface of the semiconductor epitaxial structure, or disposed on the first surface of the outer surface of the semiconductor epitaxial structure and a second surface of the semiconductor epitaxial structure away from the first surface, respectively. The covering layer is disposed on the outer surface of the semiconductor epitaxial structure.

Micro light emitting device structure and display apparatus

A micro light-emitting diode includes an epitaxial structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, and has a first ion implantation region. A first distance is present between a surface of the first type semiconductor layer and a top surface of the light-emitting layer adjacent to the surface. A second distance is present between the surface of the first type semiconductor layer and a first bottom side of the first ion implantation region. The second distance is greater than the first distance and less than a height of a mesa. A first included angle having an absolute value between 0 and 15 degrees is present between a first extension direction of a first inner side of the first ion implantation region and a normal direction of the light-emitting layer.

Micro light emitting diode and micro light-emitting diode display panel

A display panel and a manufacturing method thereof are provided. The display panel includes a circuit substrate and a plurality of micro light-emitting diode structures. The micro light-emitting diode structures each include a micro light-emitting chip and a molding structure. The micro light-emitting chip is electrically bonded to the circuit substrate, and includes a first surface, a second surface, and a peripheral surface. The first surface is located on a side of the micro light-emitting chip facing the circuit substrate. The second surface is disposed opposite to the first surface. The peripheral surface connects the first surface and the second surface. The molding structure surrounds the peripheral surface and encloses the second surface of the micro light-emitting chip. The molding structure extends in a direction away from the circuit substrate and forms an inner side wall. The inner side wall and the second surface constitute an accommodating portion.

Display panel and manufacturing method thereof

A micro LED display panel is provided. The micro LED display panel includes a driving substrate and a plurality of bonding pads disposed on the driving substrate and spaced apart from each other. The micro LED display panel also includes a plurality of micro LED structures electrically connected to the bonding pads. Each micro LED structure includes at least one electrode disposed on the side of the micro LED structure facing the driving substrate. The electrode has a normal contact surface and a side contact surface. The normal contact surface faces the driving substrate, and the side contact surface is laterally connected to the corresponding bonding pad.

Micro LED display panel

A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Manufacturing method of electronic element module

A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.

Micro light emitting diode display device

A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

A micro light-emitting component, a micro light-emitting structure and a display device are disclosed. The micro light-emitting component has a micro light-emitting chip and a buffer element. The micro light-emitting chip has a first surface, a second surface opposite to the first surface and a plurality of outer sidewalls. The buffer element is disposed on the outer sidewalls or the first surface of the micro light-emitting chip. The buffer element has an inner surface and an outer surface. An angle is defined between the inner surface and the first surface or an extended surface of the first surface. The angle is greater than or equal to 90 degrees and less than or equal to 180 degrees. Therefore, the buffer element prevents the first surface of the micro light-emitting chip from damaging by collision when the micro light-emitting chip is dropped with the first surface facing down during a transferring procedure.

Micro light-emitting component, micro light-emitting structure and display device

A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate.

Micro light emitting diode display panel with option of choosing to emit light both or respectively of light-emitting regions

A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.

Light-emitting diode structure and manufacturing method thereof

An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.

Epitaxial structure, semiconductor structure including the same, and semiconductor pickup element for transferring the same

A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.

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Miaoli County, Taiwan

Yu-Yun Lo