Playnitride Inc.

Genesis Photonics Inc.

Pixeled Display Co., Ltd.

Yu-Yun Lo

Chih-Ling Wu

Tzu-Yang Lin

Yu-Hung Lai

Yi-Ru Huang

Yi-Min Su

Jing-En Huang

Shao-Ying Ting

Yun-Li Li

Po-Jen Su

Jyun-De Wu

Yi-Chun Shih

Yi-Ching Chen

Yu-Chu Li

YI-Fan Li

Pei-Hsin Chen

Cheng-Hung Lin

Cheng-Yen Chen

Ying-Tsang Liu

Shao-Hua Huang

Yen-Yeh Chen

Huan-Pu Chang

An apparatus with micro devices includes a circuit substrate, at least one micro device, and at least one light guide structure. The micro device is disposed on the circuit substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The light guide structure is disposed on the circuit substrate and is not in direct contact with the first-type electrode and the second-type electrode. The light guide structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. An orthographic projection area of the light guide structure on the top surface is smaller than an area of the top surface.

Apparatus with micro device

A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.

Manufacturing method of micro light emitting diode device including different-type epitaxial structures having respective connection portions of different thicknesses

A micro device includes an epitaxial structure and a light guide structure. The epitaxial structure has a top surface. The light guide structure is disposed on the top surface, and the light guide structure includes a connecting portion and a covering portion. The connecting portion is disposed on an edge of the epitaxial structure and extends along a sidewall of the epitaxial structure. The covering portion is disposed on the top surface and connected to the connecting portion. A width of the connecting portion at the edge of the epitaxial structure is smaller than a width away from the top surface.

Micro device and micro device display apparatus

A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.

Micro light emitting diode device and manufacturing method thereof

A structure with micro light-emitting device includes a substrate, at least one micro light-emitting device, a holding structure, and at least one buffer structure. The micro light-emitting device is disposed on the substrate, and there is a vertical distance between the micro light-emitting device and the substrate. The holding structure is disposed on the substrate and directly contacts the micro light-emitting device. The buffer structure directly contacts the holding structure. Here, a Young's modulus of the buffer structure is smaller than a Young's modulus of the holding structure.

Structure with micro light-emitting device

A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.

Carrier structure and micro device structure

Micro light emitting diode device including different-type epitaxial structures having respective connection portions of different thicknesses

A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, a side surface and a second surface opposite to the first surface. The side surface of the epitaxial structure connects to an outer edge of the first surface and an outer edge of the second surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacts the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on and surrounds the side surface, and electrically connected to the second type doped semiconductor layer, and directly contacts the second type doped semiconductor layer on a portion of the side surface. A length of a diagonal of the micro light-emitting diode chip is greater than 1 micrometer and is less than or equal to 140 micrometers, and a thickness of the micro light-emitting diode chip is great than 1 micrometer and is less than 10 micrometers.

Micro light-emitting diode chip

A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.

Micro light emitting diode chip and display panel having a backplane and a plurality of sub-pixels regions

A structure with micro devices includes a substrate, at least one micro device, and at least one holding structure. The micro device is disposed on the substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The holding structure is disposed on the substrate and is away from the first-type electrode and the second-type electrode. The holding structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. The holding portion is connected to the connecting portion and extends onto the substrate.

Structure of micro device with holding structure

A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.

Micro light emitting diode device

A structure with micro device including a substrate, at least one micro device, and at least one holding structure is provided. The micro device having a top surface is disposed on the substrate, and the top surface is away from the substrate. The holding structure including at least one connecting portion and at least one holding portion is disposed on the substrate. The connecting portion is disposed on at least one edge of the micro device. The holding portion connects the connecting portion and extends to the substrate. From a top view direction, a width of the connecting portion gradually increases from the edge of the micro device to the holding portion.

Structure with micro device

A structure with micro device includes a substrate, a plurality of micro devices, and a plurality of holding structures. The micro devices are disposed on the substrate and arranged in multiple rows. Each of the micro devices has a top surface. The holding structures are respectively disposed on the top surface of each of the micro devices and extend to the substrate. Distances between the holding structure on the micro devices on any one of the rows and the holding structures on the micro devices on two adjacent rows are different.

Micro light emitting diode chip and display panel having semiconductor epitaxial structure

A structure with micro device including a substrate, at least one micro device and at least one holding structure is provided. The micro device is disposed on the substrate and has a top surface away from the substrate, a bottom surface opposite to the top surface, and a circumferential surface connecting the top surface and the bottom surface. The holding structure is disposed on the substrate. From the cross-sectional view, a thickness of the holding structure is not fixed from the boundary of the top surface and the circumferential surface to the substrate. The micro device is connected to the substrate through the holding structure.

Growing community of inventors

Tainan, Taiwan

Yu-Yun Lo