Iwatani Corporation

Tokyo Electron Limited

Disco Corporation

Central Glass Company, Limited

Kyoto University

Yu Yoshino

Takehiko Senoo

Kunihiko Koike

Kazuya Dobashi

Toshihiro Aida

Takehiko Orii

Yukimasa Saito

Koichi Izumi

Tadashi Shojo

Tomoya Biro

Keita Kanehira

Akitaka Shimizu

Takatoshi Masuda

Jiro Matsuo

Toshio Seki

Sakae Matsuzaki

Naohisa Makihira

Kensuke Inai

Toshiki Manabe

Kenta Yasuda

Masahiro Tainaka

Manabu Saeda

Hiroshi Ichimaru

Nozomi Maemoto

Shuhei Azuma

Satoshi Ninomiya

There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

Gas cluster processing device and gas cluster processing method

A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.

Method and apparatus for supplying mixed gas

Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClFin a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage () and a gas discharge passage () to a processing chamber () of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber () and the gas supply passage () among the processing chamber (), the gas supply passage (), and the gas discharge passage (), which are integrally formed, to coat the inner surfaces of at least the processing chamber () and the gas supply passage () with a fluoride film.

Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride

A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

Substrate cleaning apparatus and vacuum processing system

A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

Dividing method for wafer

A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.

Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component

Growing community of inventors

Moriyama, Japan

Yu Yoshino