Northwestern University

University of Illinois

Novellus Systems Incorporated

Yu Yang

Tobin Jay Marks

Lian Wang

Antonio Facchetti

Myung-Han Yoon

John A Rogers

Gregory S Girolami

Shuai Xu

John Abelson

Rujie Sun

Ha Uk Chung

Anchuan Wang

Chiukin Steven Lai

In Hwa Jung

Do Young Kim

Xinge Yu

Jungyup Lee

Xinye Liu

Navneet Kumar

Scott Daly

Jun Ni

Andrew Metz

Shu Jin

Sreenivas Jayaraman

Provided are actuation devices, virtual reality devices formed from the actuation devices, and related virtual reality methods. The devices may comprise a plurality of spatially distributed actuators, each actuator configured for interacting with a biological skin surface; a wireless controller configured to receive operative command signals to control each of the actuators; and a wireless power system to power the actuators. Also provided are unique layouts of multiple interconnected devices to achieve large area coverage.

Epidermal virtual reality devices

Inorganic semiconducting compounds, composites and compositions thereof, and related device structures.

Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films

The present invention provides compositions of matter useful as deposition agents for making structures, including thin film structures and hard coatings, on substrates and features of substrates. In an embodiment, for example, the present invention provides metal complexes having one or more diboranamide or diboranaphosphide ligands that are useful as chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) precusors for making thin film structures and coatings. Metal complex CVD precursors are provided that possess volitilities sufficiently high so as to provide dense, smooth and homogenous thin films and coatings.

Metal complex compositions and methods for making metal-containing films

Transparent conducting oxide thin films having a reduced indium content and/or an increased tin content are provided. In addition, processes for producing the same, precursors for producing the same, and transparent electroconductive substrate for display panels and organic electroluminescence devices, both including the transparent conducting oxide thin films, are provided.

Transparent conducting oxide thin films and related devices

Methods for removing silicon nitride and elemental silicon during contact preclean process involve converting these materials to materials that are more readily etched by fluoride-based etching methods, and subsequently removing the converted materials by a fluoride-based etch. Specifically, silicon nitride and elemental silicon may be treated with an oxidizing agent, e.g., with an oxygen-containing gas in a plasma, or with Oor Oin the absence of plasma to produce a material that is more rich in Si&#x2014;O bonds and is more easily etched with a fluoride-based etch. Alternatively, silicon nitride or elemental silicon may be doped with a number of doping elements, e.g., hydrogen, to form materials which are more easily etched by fluoride based etches. The methods are particularly useful for pre-cleaning contact vias residing in a layer of silicon oxide based material because they minimize the unwanted increase of critical dimension of contact vias.

Methods for removing silicon nitride and other materials during fabrication of contacts

The present invention provides methods for conformally or superconformally coating and/or uniformly filling structures with a continuous, conformal layer or superconformal layer. Methods of the present invention improve conformal or superconformal coverage of surfaces and improve fill in recessed features compared to conventional physical deposition and chemical deposition methods, thereby minimizing formation of voids or gaps in a deposited conformal or superconformal layer. The present methods are capable of coating or filling features useful for the fabrication of a broad class of electronic, electrical and electromechanical devices.

Methods for coating and filling high aspect ratio recessed features

Growing community of inventors

Santa Clara, CA, United States of America

Yu Yang