Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Yu Yamazawa

Hideo Kashima

Tomonori Nakano

Kazutoshi Kaji

Naoto Ito

A charged particle beam apparatus including a winding aberration corrector capable of correcting a chromatic aberration is provided. A multi-pole lens includes a magnetic core, a plurality of current linesto, a plurality of wire-shaped electrodesto, insulating electrode fixing portionstofor fixing the plurality of electrodes to a structure in a vacuum container, and conductive shieldsset to a reference potential, which are provided between the electrode fixing portion and a central axis of the magnetic core, main line portions of the plurality of current lines are arranged axisymmetrically with respect to the central axis of the magnetic core along an inner wall of the magnetic core, and portions of the plurality of electrodes parallel to the central axis of the magnetic core are arranged axisymmetrically with respect to the central axis of the magnetic core.

Charged particle beam apparatus

In an electron beam apparatus performing angular scanning that changes an incident angle of an electron beam incident at a predetermined incident position on a sample, when a correction coil is provided in a gap portion of a yoke (magnetic path) of an objective lens, spherical aberration can be corrected by following a deflection signal even if a deflection frequency increases. Therefore, a main control unit that controls an electron optical system sets predetermined phase change amounts a, b with respect to control of a scanning coil in control of the correction coil, and the predetermined phase change amounts a, b are made different depending on a plurality of scanning modes having different scanning speeds.

Electron beam apparatus

A charged particle beam device capable of easily discriminating the energy of secondary charged particles is realized. The charged particle beam device includes a charged particle source, a sample stage on which a sample is placed, an objective lens that irradiates the sample with a charged particle beam from the charged particle source, a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam, a detector that detects the secondary charged particles deflected by the deflector, a sample voltage control unit that applies a positive voltage to the sample or the sample stage, and a deflection intensity control unit that controls the intensity with which the deflector deflects the secondary charged particles.

Charged particle beam device, and observation method and elemental analysis method using the same

An object of the present invention relates to high-resolution observation on a light field STEM, a dark field image STEM, and an EELS, at a low acceleration voltage. The present invention relates to controlling on incorporation angles of a STEM detector and an electron energy loss spectroscopy by changing the disposition of a sample with respect to an optical axis direction of a primary electron beam in a scanning transmission microscopy including an electron energy loss spectroscopy. According to the present invention, it is possible to easily control an optimum scattering angle in each of a light field STEM, a dark field STEM, and an EELS while suppressing occurrence of chromatic aberration accompanying the controlling on the incorporation angle.

Growing community of inventors

Tokyo, Japan

Yu Yamazawa