Huawei Technologies Co., Limited

Byd Company Limited

Yu Xia

Qi Chen

Xiaolong Ma

Wenfeng Jiang

Mei Li

Bingwu Ji

Wen Yang

Riqing Zhang

Yanxiang Liu

Yongjie Zhou

Jianfu Zhong

Qiuling Zeng

Sunhom Steve Paak

Daxiang Wang

Zanfeng Chen

Huabin Chen

Guogang Liu

Honggu Pan

This application provides an integrated circuit device and a preparation method thereof, and relates to the field of semiconductor technologies. An isolation section for suppressing a leakage current path of two adjacent transistors may be formed by using a simple process. The integrated circuit device includes a substrate and a fin protruding from the substrate. The integrated circuit device further includes two adjacent transistors. The two adjacent transistors use two spaced segments on the fin as respective channels of the two adjacent transistors. A part that is of the fin and that is located between the two spaced segments is processed to obtain an isolation section. The isolation section is used to suppress current transfer between the two channels of the two adjacent transistors.

Integrated circuit device and preparation method thereof

In embodiments of the present disclosure, an ambient medium of a two-dimensional semiconductor is doped or an ambient medium of a semiconductor is locally filled with a solid material, to form a filled region, and an electronic device based on the two-dimensional semiconductor is implemented by means of a doping effect of the doped region or the filled region on a characteristic of the two-dimensional semiconductor. In the embodiments of the present disclosure, doping the two-dimensional semiconductor is not directly processing the two-dimensional semiconductor. Therefore, damage caused to the two-dimensional semiconductor in a doping process and device performance deterioration caused accordingly can be effectively reduced, and stability of device performance after doping is improved.

Electronic device based on two-dimensional semiconductor and method for manufacturing electronic device

This application discloses an electrostatic discharge protection apparatus and an integrated circuit with multiple power domains. The electrostatic discharge protection apparatus includes a diode and an NMOS transistor. A positive electrode of the diode is coupled to a first interface, a negative electrode of the diode is coupled to a first electrode of the NMOS transistor, both a second electrode of the NMOS transistor and a gate electrode of the NMOS transistor are coupled to a second interface, and a substrate of the NMOS transistor is used for grounding. At least one electrostatic discharge protection apparatus may be disposed in the integrated circuit with multiple power domains.

Electrostatic discharge protection apparatus and integrated circuit with multiple power domains

A phase-inverted clock generation circuit is provided, where sources of a first PMOS and a second PMOS are connected to a power source, drains of the first PMOS and the second PMOS are connected to a source of a third PMOS, and a drain of the third PMOS is connected to a drain of a third NMOS; and the drain of the third PMOS is connected to a drain of a second NMOS, a source of the second NMOS is connected to a drain of a first NMOS, and a source of the first NMOS and a source of the third NMOS.

Phase-inverted clock generation circuit and register

Growing community of inventors

Shenzhen, China

Yu Xia