Polyera Corporation

Flexterra, Inc.

Northwestern University

Polyera Corporatoin

Yu Xia

Antonio Facchetti

Shaofeng Lu

Chun Huang

Tobin Jay Marks

He Yan

Zhihua Chen

William Christopher Sheets

Damien Boudinet

Mercouri G Kanatzidis

Yan Zheng

Zhikai Wang

Wei Zhao

Daniel Batzel

Meko McCray

Myung-Gil Kim

Theresa L Starck

Timothy Chiu

Mark Seger

Minhuei Wang

Darwin Scott Bull

Hakan Usta

Jordan R Quinn

Martin Drees

Jianhua Chen

Xiang Yu

Jingqi Wang

Joshua Lee Ayers

Shiuan-Iou Lin

Wei Huang

Tobin J Marks

Ferdinand Melkonyan

Jing Chen

Huei Shuan Phoebe Tan

Liang-Je Lai

Photocurable compositions that combine redox-active semiconducting organic polymers with photocurable organic molecules are provided. Upon exposure to radiation, the photocurable compositions form ion-permeable, electrically conductive crosslinked organic films that can be used as conducting channels in n-channel or p-channel organic electrochemical transistors, including vertical organic electrochemical transistors (vOECTs). The vOECTs can be incorporated in complementary electronic circuits.

Polymer compositions for vertical channel organic electrochemical transistors and complementary logic circuits

An active matrix fluidic droplet driver system comprising a plurality fluidic droplet pixels driver comprising organic thin-film transistors is described. Each fluidic droplet pixel driver includes an organic thin film transistor and a pixel electrode where the gate dielectric layer and the pixel dielectric layer comprise an organic polymer. The active matrix fluidic droplet driver system can be fabricated on plastic substrates at low temperature and operates at no more than 40 V.

Electrowetting on demand system with organic transistors

This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.

Thin-film transistor comprising organic semiconductor materials

Disclosed are low-temperature thermally and/or ultraviolet light curable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such low-temperature thermally and/or ultraviolet light curable polymers. In some embodiments, the device can include a passivation layer prepared from the low-temperature thermally and/or ultraviolet light curable polymers described herein. In certain embodiments, a polymer of the disclosure has a repeating unit having the structure (I) in which Q-Qand Q-Qare each independently &#x2014;C(H)&#x2550;C(H)&#x2014; or (II) in which each n is independently selected from 1, 2, 3 and 4, and the polymer includes at least one repeating unit of Formula (I) wherein Q-Qand Q-Qis (II).

Organic dielectric materials and devices including them

The present teachings relate to novel polymeric materials for electrode treatment. The present polymeric electrode modifiers can be derived from an episulfide monomer via either an acid-catalyzed ring-opening polymerization reaction or a nucleophilic polymerization reaction.

Polymeric electrode modifiers

The present teachings relate to organic semiconductor formulations including an organic semiconducting compound in a liquid medium, where the liquid medium includes (1) a compound in liquid state that has electronic properties complementary to the electronic structure of the organic semiconducting compound and optionally (2) a solvent or solvent mixture for solubilizing the organic semiconducting compound. The present formulations can be used as inks in the fabrication of organic semiconductor devices.

Organic semiconductor formulations

The present polymeric materials can be patterned with relatively low photo-exposure energies and are thermally stable, mechanically robust, resist water penetration, and show good adhesion to metal oxides, metals, metal alloys, as well as organic materials. In addition, these polymeric materials can be solution-processed (e.g., by spin-coating), and can exhibit good chemical (e.g., solvent and etchant) resistance in the cured form.

Photopatternable materials and related electronic devices and methods

The present invention relates to new semiconducting compounds having at least one optionally substituted bithiophene sulfonamide moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Bithiophene sulfonamide-based molecular and polymeric semiconductors

Disclosed are curable linear polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such curable linear polymers. In some embodiments, the device can include a passivation layer prepared from the linear polymers described herein. The present linear polymers can be solution-processed, then cured thermally (particularly, at relatively low temperatures) and/or photochemically into various thin film materials with desirable properties.

Curable polymeric materials and their use for fabricating electronic devices

Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (&#x3c;400&#xb0; C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Low-temperature fabrication of nanomaterial-derived metal composite thin films

Described herein is a solution-processable composition for preparing a photopatternable material. The solution-processable composition generally includes (a) an oligomeric siloxane component that includes, based on its total weight, between about 40% by weight and about 100% by weight one or more cage-structured polyhedral oligomeric silsesquioxanes that are functionalized with one or more crosslinkable moieties such as cycloaliphatic epoxy moieties, (b) a polymerization initiator; (c) one or more thermosettable polymers that collectively are present in an amount between about 1% by weight and about 20% by weight based on the total weight of the oligomeric siloxane component; and (d) a solvent.

Disclosed are formulations including an organic semiconducting compound in a liquid medium, where the liquid medium includes (1) a compound in liquid state that has electronic properties complementary to the electronic structure of the organic semiconducting compound and optionally (2) a solvent or solvent mixture for solubilizing the organic semiconducting compound. The present formulations can be used as inks in the fabrication of organic semiconductor devices.

Curable polymeric materials and related electronic devices

Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.

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Skokie, IL, United States of America

Yu Xia