Industrial Technology Research Institute

Yu-Wu Wang

Cheng-Chung Lee

Horng-Long Cheng

Chun-Tao Lee

Chi-Chang Liao

Jia-Chong Ho

Yih-Jun Wong

Yu-Yang Chang

Yung-Hui Yeh

Hsing-Lung Wang

Wei-Yang Chou

Jyh-Rong Sheu

Chai-Yuan Sheu

Yu-Lung Liu

Chih-Ming Lai

Chun-Yao Huang

Chen-Pang Kung

Chen-Ming Chen

Wei-Yi Lin

Yi-Kai Wang

Cheng-Chung Chen

Ming-Chun Hsiao

Chih-Wen Hsiao

Huai-Yuan Tseng

Ching-Hsun Chao

Jen-Hao Lee

Pzng Lin

A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Compound semiconductor material and method for forming an active layer of a thin film transistor device

A vertical pixel structure for emi-flective display and a method thereof are provided. The vertical pixel structure has a substrate, a emitting pixel unit arranged on the substrate and a reflective pixel unit arranged on the emitting pixel unit. By using the vertical pixel structure the aperture of the display can be increased, and the power consumption can be reduced as well.

Vertical pixel structures for emi-flective display and methods for making the same

This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.

Circuit structure with a double-gate organic thin film transistor device and application thereof

A pixel structure for a vertical emissive-reflective (emi-flective) display is provided. The pixel structure has a substrate, a self-light emitting pixel unit arranged on the substrate, and a reflective pixel unit arranged on the self-light emitting pixel unit. By using the vertical pixel structure, the aperture of the display can be increased, and the power consumption can also be decreased.

Pixel structure for vertical emissive- reflective display

An organic thin film transistor array substrate including a substrate divided into an LCD region and an OTFT region; a first dielectric layer formed on the substrate in the LCD region and having a first uneven portion; an organic semiconducting layer formed on the substrate in the OTFT region; a gate, source, and drain formed in the OTFT region, wherein the source and drain are in contact with the organic semiconducting layer to form a channel between the source and drain; and a pixel electrode formed on the first uneven portion of the first dielectric layer in the LCD region.

Organic thin film transistor array substrate and liquid crystal display including the same

A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

Triode structure of field emission display and fabrication method thereof

A field emission display (FED) having a grid plate with spacer structure and fabrication method thereof. A first wplate having first electrodes and electron emitters on a first surface is provided. A second plate having second electrodes and phosphor regions on a second surface is also provided, wherein the second surface is opposite the first surface. A grid plate with spacer structure and passages having grid electrodes is positioned between the two plates to maintain a predetermined interval. When a specific voltage is applied between the first electrode and the second electrode, electrons extracted from the electron emitters are accelerated by the grid electrodes through the passages to impact the phosphor regions.

Method of fabricating field emission display having a grid plate

The invention provides an organic thin film transistor array substrate, comprising: a substrate, having a liquid crystal display area and an organic thin film transistor area; a pixel electrode, formed on the substrate in the LCD area; a first alignment film, formed on the pixel electrode; a second alignment film, formed on the substrate in the OTFT area; an organic semiconductor layer, formed on the second alignment film, wherein the organic semiconductor layer is aligned along the direction of the second alignment film; and a gate, a source and a drain, formed in the OTFT area, wherein the source and the drain are in contact with the organic semiconductor layer and a channel is formed between the source and the drain.

Organic thin film transistor array substrate

A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

Thin film transistor structure for a field emission display and the method for making the same

An organic integrated device for thin film transistor and light emitting diode. The organic integrated device of the present invention includes a top-gate organic thin film transistor (top-gate OTFT) and an organic light emitting diode (OLED), both formed on the same substrate. In the organic integrated device, some layers can be commonly used by both OTFT and OLED, and some layers can be made of the same material and formed in the same course, which simplifies the entire process.

Organic integrated device for thin film transistor and light emitting diode and process for fabricating the same

A nanotube field emission display. The nanotube field emission display includes a nanotube field emission cell, an active device, and a capacitor. The nanotube field emission cell includes a cathode, a gate, and an anode, wherein the cathode has nanotubes for field emission where the gate is used. The active device includes a first electrode, a second electrode, and a control electrode, wherein the second electrode is coupled to the gate of the nanotube field emission cell. The capacitor is coupled between the gate of the nanotube field emission cell and a voltage source to store gate voltage to control illumination and gray level of the nanotube field emission cell.

Growing community of inventors

Taichung, Taiwan

Yu-Wu Wang