Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Wen Liao

Wen-Ting Chu

Hsia-Wei Chen

Chin-Chieh Yang

Chih-Yang Chang

Kuo-Chi Tu

Sheng-Hung Shih

Jen-Sheng Yang

Wen-Chun You

Yong-Shiuan Tsair

Chieh-Fei Chiu

I-Ching Chen

Tong-Chern Ong

Ching-Pei Hsieh

Tung-Sheng Hsiao

Chia-Shiung Tsai

Harry-Hak-Lay Chuang

Po-Hao Tseng

Fu-Ting Sung

Hung Cho Wang

Sheng-Huang Huang

Kuei-Hung Shen

Kuo-Yuan Tu

Chin-Yu Mei

Cheng-Yuan Tsai

Hsing-Lien Lin

Trinh Hai Dang

Shih-Chang Liu

Chia-Wei Liu

Fa-Shen Jiang

Chih-Hsiang Chang

Wei-Ming Wang

Chih-Hung Pan

Manish Kumar Singh

Tzu-Hsuan Yeh

Huei-Tzu Wang

Chih-Ming Chen

Yen-Yu Chen

Chang-Ming Wu

Ru-Liang Lee

Wen-Hao Cheng

Yu-Hsing Chang

Hsuan-Chih Chu

Yuan-Huang Lee

A resistive memory cell includes a lower electrode, a resistive transition metal oxide layer, and an upper electrode. The lower electrode includes at least one lower metallic barrier layer, a lower metal layer including a first metal having a melting point higher than 2,000 degrees Celsius, and a transition metal compound layer including an oxide or nitride of a transition metal selected from Ti, Ta, and W. The resistive transition metal oxide layer includes a conductive-filament-forming dielectric oxide of at least one transition metal and located on the transition metal compound layer. The upper electrode includes an upper metal layer including a second metal having a melting point higher than 2,000 degrees Celsius and at least one upper metallic barrier layer.

Resistive memory cell using an interfacial transition metal compound layer and method of forming the same

A memory device includes a bottom electrode, a buffer element, a metal-containing oxide portion, a resistance switch element, and a top electrode. The buffer element is over the bottom electrode. The metal-containing oxide portion is over the buffer element, in which the metal-containing oxide portion has a same metal material as that of the buffer element. The resistance switch element is over the metal-containing oxide portion. The top electrode is over the resistance switch element.

Memory device with bottom electrode

A memory device includes a first bottom electrode, a first memory stack, and a second memory stack. The first bottom electrode has a first portion and a second portion connected to the first portion. The first memory stack is over the first portion of the first bottom electrode. The first memory stack includes a first resistive switching element and a first top electrode over the first resistive switching element. The second memory stack is over the second portion of the first bottom electrode. The second memory stack comprises a second resistive switching element and a second top electrode over the second resistive switching element.

Memory device having two memory stacks over one bottom electrode

A method for fabricating an integrated circuit is provided. The method includes depositing a dielectric layer over a conductive feature; etching an opening in the dielectric layer to expose the conductive feature, such that the dielectric layer has a tapered sidewall surrounding the opening; depositing a bottom electrode layer into the opening in the dielectric layer; depositing a resistance switch layer over the bottom electrode layer; patterning the resistance switch layer and the bottom electrode layer respectively into a resistance switch element and a bottom electrode, in which a sidewall of the bottom electrode is landing on the tapered sidewall of the dielectric layer.

Integrated circuit

An integrated circuit device includes an interconnect layer, a memory structure, a third conductive feature, and a fourth conductive feature. The interconnect layer includes a first conductive feature and a second conductive feature. The memory structure is over and in contact with the first conductive feature. The memory structure includes at least a resistance switching element over the first conductive feature. The third conductive feature, including a first conductive line, is over and in contact with the second conductive feature. The fourth conductive feature is over and in contact with the memory structure. The fourth conductive feature includes a second conductive line, a top surface of the first conductive line is substantially level with a top surface of the second conductive line, and a bottom surface of the first conductive line is lower than a bottommost portion of a bottom surface of the second conductive line.

Integrated circuit device

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a memory device arranged over an etch stop material over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A first interconnect via contacts an upper surface of the bottom electrode and a second interconnect via contacts an upper surface of the top electrode. An interconnect wire contacts a top of the first interconnect via. A third interconnect via contacts a bottom of the interconnect wire and extends through the etch stop material to a plurality of lower interconnects below the etch stop material.

Memory structure

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first resistive random access memory (RRAM) element and a second RRAM element over a substrate. A conductive element is arranged below the first RRAM element and the second RRAM element. The conductive element electrically couples the first RRAM element to the second RRAM element. An upper insulating layer continuously extends over the first RRAM element and the second RRAM element. An upper inter-level dielectric (ILD) structure laterally surrounds the first RRAM element and the second RRAM element. The upper insulating layer separates the first RRAM element and the second RRAM element from the upper ILD structure.

RRAM memory cell with multiple filaments

Various embodiments of the present application are directed towards an integrated chip comprising memory cells separated by a void-free dielectric structure. In some embodiments, a pair of memory cell structures is formed on a via dielectric layer, where the memory cell structures are separated by an inter-cell area. An inter-cell filler layer is formed covering the memory cell structures and the via dielectric layer, and further filling the inter-cell area. The inter-cell filler layer is recessed until a top surface of the inter-cell filler layer is below a top surface of the pair of memory cell structures and the inter-cell area is partially cleared. An interconnect dielectric layer is formed covering the memory cell structures and the inter-cell filler layer, and further filling a cleared portion of the inter-cell area.

Method to form memory cells separated by a void-free dielectric structure

A method for fabricating an integrated circuit device is provided. The method includes forming an interconnect layer over a substrate, wherein the interconnect layer has a first interlayer dielectric layer, a first conductive feature in a first portion of the first interlayer dielectric layer, and a second conductive feature in a second portion of the first interlayer dielectric layer; depositing a dielectric layer over the interconnect layer; removing a first portion of the dielectric layer over the first conductive feature and the first portion of the first interlayer dielectric layer, and remaining a second portion of the dielectric layer over the second conductive feature and the second portion of the first interlayer dielectric layer; and forming a memory structure over the first conductive feature.

Method for fabricating integrated circuit device

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first interconnect within a first inter-level dielectric (ILD) layer over a substrate. A memory device is disposed over the first interconnect and is surrounded by a second ILD layer. A sidewall spacer is arranged along opposing sides of the memory device and an etch stop layer is arranged on the sidewall spacer. The sidewall spacer and the etch stop layer have upper surfaces that are vertically offset from one another by a non-zero distance. A second interconnect extends from a top of the second ILD layer to an upper surface of the memory device.

Interconnect landing method for RRAM technology

A resistive random access memory (RRAM) structure includes a resistive memory element formed on a semiconductor substrate. The resistive element includes a top electrode, a bottom electrode, and a resistive material layer positioned between the top electrode and the bottom electrode. The RRAM structure further includes a field effect transistor (FET) formed on the semiconductor substrate, the FET having a source and a drain. The drain has a zero-tilt doping profile and the source has a tilted doping profile. The resistive memory element is coupled with the drain via a portion of an interconnect structure.

Resistive switching random access memory with asymmetric source and drain

Various embodiments of the present application are directed towards a method for forming a flat via top surface for memory, as well as an integrated circuit (IC) resulting from the method. In some embodiments, an etch is performed into a dielectric layer to form an opening. A liner layer is formed covering the dielectric layer and lining the opening. A lower body layer is formed covering the dielectric layer and filling a remainder of the opening over the liner layer. A top surface of the lower body layer and a top surface of the liner layer are recessed to below a top surface of the dielectric layer to partially clear the opening. A homogeneous upper body layer is formed covering the dielectric layer and partially filling the opening. A planarization is performed into the homogeneous upper body layer until the dielectric layer is reached.

Flat bottom electrode via (BEVA) top surface for memory

Memory cells separated by a void-free dielectric structure

The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.

Memory device

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New Taipei, Taiwan

Yu-Wen Liao