Applied Materials, Inc.

Other

Super Micro Computer, Inc.

Yu Wen Chang

Joel M Huston

Mei Yin Chang

Chien-Teh Kao

Siqing Lu

Michael Xiaoxuan Yang

Wei W Wang

Xinliang Lu

Xiaoxiong Yuan

Gwo-Chuan Tzu

Henry Ho

See-Eng Phan

Son Trinh

Muhammad M Rasheed

Lawrence C Lei

Steven Aihua Chen

Paul F Smith

Olkan Cuvalci

Karl Anthony Littau

Ming Xi

Avgerinos V Gelatos

Dien-Yeh Wu

Daniel O Clark

Muhannad Mustafa

Xuyen Pham

Anh Ngoc Nguyen

Faruk Gungor

Srinivas Gandikota

Seshadri Ganguli

Yixiong Yang

Salvador P Umotoy

Cheng-Hsiung Matt Tsai

Wei V Tang

Jallepally Ravi

Kazuya Daito

Anzhong Chang

Fufa Chen

Wen Xiao Chen

Mario Dan Sanchez

David T Or

Manjunatha P Koppa

Sang-Hyeob Lee

Aihua Chen

Takashi Kuratomi

Chiukin Steven Lai

William Kuang

Xiaoxiong (John) Yuan

Sal Umotoy

Jing-Pei (Connie) Chou

Chiukin (Steven) Lai

Anqing Cui

Quyen Pham

Cecilia Martner

Yu Ping Gu

Shun Jackson Wu

Bruce W Peuse

Jitendra Ratilal Bhimjiyani

Gabriel Lorimer Miller

Wesley W Zhang

Wen Chiang Tu

Dongxi Sun

Vinh Dang

Behzad Shamlou

Ronald D DeDore

Aravind Kamath

Fong M Chang

Tomoharu Matsushita

Hsiao Chen

Steven T Li

Vinod Konda Purathe

Xiping Huo

Jing Lin

Anzhong (Andrew) Chang

Jing-Pei Chou

Kyoung-Ho Bu

Binh Bui

Andrew J Ruspini

Emily Renuart

Wing-Cheong Lai

Bin V Cao

Tan Hsin Chang

Yueh Ming Liu

Vikas Jangra

Hung Chieh Chang

G Lorimer Miller

Gwo Tzu

Kuo-Chun Wu

Sang Q Le

Wie W Wang

Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

Substrate processing chamber having heated showerhead assembly

The present disclosure is related to electronic devices. At least some embodiments of the present disclosure relate to an electronic device comprising a circuit board, a first connector, and a second connector. The first connector and the second connector are disposed on the circuit board. The first connector is different from the second connector. The second connector is adjacent to the first connector. The first connector is arranged along a reference line in a first direction, and the second connector is adjacent to the reference line in the first direction.

Electronic devices for expansion

Embodiments of a slip ring for use in a rotatable substrate support are provided herein. In some embodiments a slip ring includes a main body having a top wall, a bottom wall, and a sidewall extending between the top and bottom walls, wherein the top wall, bottom wall, and sidewall define an inner volume within the main body, wherein a central opening is formed through the top wall; a plurality of annular containers disposed within the inner volume and coaxially with the main body, wherein the plurality of annular containers are vertically spaced apart from one another, and wherein each of the plurality of annular containers contains a first volume of an electrically conductive liquid; an upper cylindrical body rotatably disposed in the central opening; a lower cylindrical body fixedly coupled to the lower wall of the main body.

Slip ring for use in rotatable substrate support

Embodiments of the present disclosure are directed to a quick disconnect resistance temperature detector (RTD) heater assembly, that includes a first assembly comprising a pedestal, a pedestal shaft, an adapter, one or more heater power supply terminals, and at least one RTD, and a second assembly comprising a rotating module having a central opening, and a cable assembly partially disposed in the central opening and securely fastened to the rotating module, wherein the first assembly is removably coupled to the second assembly, wherein the cable assembly includes one or more power supply sockets that receive the heater power supply terminals when the first and second assemblies are coupled together, and wherein the cable assembly includes one or more spring loaded RTD pins that contact the at least one RTD disposed in the first assembly when the first and second assemblies are coupled together.

Quick disconnect resistance temperature detector assembly for rotating pedestal

Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

Atomic layer deposition chamber with thermal lid

Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a body having a support surface; an RF electrode disposed in the body proximate the support surface to receive RF current from an RF source; a shaft to support the body; a conductive element having an interior volume and extending through the shaft, wherein the conductive element is coupled to the RF electrode; and an RF gasket; wherein the conductive element includes features that engage the RF gasket to return the RF current to ground.

Substrate support with improved RF return

Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first aluminum plate for supporting a substrate, the first aluminum plate having a plurality of heating elements embedded therein to provide a plurality of heating zones; a second aluminum plate disposed beneath and supporting the first aluminum plate; a third aluminum plate disposed beneath and supporting the second aluminum plate; a non-metallic ring disposed atop the first aluminum plate; and a plurality of spacers having an upper portion disposed above a surface of the first aluminum plate, wherein the non-metallic ring and the plurality of spacers support the substrate above the first aluminum plate.

Substrate support for substrate backside contamination control

A bridge assembly includes an electrically insulating hollow tube or bridge having a pair of ends, the bridge being supported at one of the ends over the cylindrical side wall and being supported at the other of the ends over the electrode. The bridge assembly further includes a set of conductive rings surrounding the hollow tube and spaced from one another along the length of the bridge, and plural electrically resistive elements. Each of the resistive elements has a pair of flexible connectors, respective ones the resistive elements connected at their flexible connectors between respective pairs of the rings to form a series resistor assembly.

Plasma reactor with a ceiling electrode supply conduit having a succession of voltage drop elements

A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65&#xb0; C., heating the substrate to a temperature of at least about 75&#xb0; C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Method for removing oxides

Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120&#xb0; C. to about 180&#xb0; C., preferably, from about 140&#xb0; C. to about 160&#xb0; C., more preferably, from about 145&#xb0; C. to about 155&#xb0; C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

Temperature controlled lid assembly for tungsten nitride deposition

A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed.

Homing of arbitrary scan path of a rotating magnetron

Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.

Substrate support with substrate heater and symmetric RF return

Control of arbitrary scan path of a rotating magnetron

A method and apparatus for controlling power output of a capacitatively-coupled plasma are provided. A detector is disposed on the power delivery conduit carrying power to one electrode to detect fluctuations in power output to the electrode. The detector is coupled to a signal generator, which converts the RF input signal to a constant control signal. A controller adjusts power input to the RF generator by comparing the control signal to a reference.

Direct real-time monitoring and feedback control of RF plasma output for wafer processing

A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

Method and apparatus for measuring a thickness of a layer of a wafer

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La Verne, CA, United States of America

Yu Wen Chang