Industrial Technology Research Institute

Altek Semiconductor Corp.

Yu-Wei Huang

Tao-Chih Chang

Yu-Min Lin

Shih-Hsien Wu

Chih-Ming Shen

Ming-Daw Chen

Chang-Ho Liou

Wei-Chung Lo

Rong-Shen Lee

Jing-Yao Chang

Chin-Hung Wang

Yu-Chih Wang

Shin-Yi Huang

Sheng-Che Hung

Tsung-Fu Yang

Shou-Te Wei

Shau-Fei Cheng

Ren-Shin Cheng

Chih Ming Shen

Yi-Chieh Tsai

Chi-Ying Huang

Fu-Kui Yang

This disclosure provides a conductive circuit carrier module including a carrier and a conductive circuit film layer. The conductive circuit film layer is disposed on the carrier. The conductive circuit film layer has at least one conductive circuit structure including a vertical wire part and at least four horizontal wire parts. The vertical wire part extends along a thickness direction of the conductive circuit film layer. The at least four horizontal wire parts are connected to one another via the vertical wire part and extend along a direction substantially perpendicular to the vertical wire part. The at least four horizontal wire parts are symmetrically arranged or asymmetrically arranged with respect to the vertical wire part.

Conductive circuit carrier module

An electronic device having a substrate includes a substrate and at least one outer layer. The substrate has a plurality of first vias. The outer layer has a plurality of second vias. The outer layer is disposed on a side of the substrate. The first vias have a larger distribution density or quantity than the second vias so that a portion of the first vias are electrically connected to the second vias, and a portion of the first vias are electrically floating.

Electronic device having substrate

A lead frame package including first conductive layer, first electronic component, lead frames, second conductive layer and package body. First conductive layer has conductive carriers. First electronic component has first pins. Lead frames and first pins are respectively electrically connected to conductive carriers. Second conductive layer has conductive joints respectively electrically connected to lead frames so as to be electrically connected to at least a part of conductive carriers via lead frames. Package body encapsulates first conductive layer, first electronic component, and lead frames. First conductive layer and second conductive layer are located on two opposite sides of first electronic component, respectively.

Lead frame package

An apparatus for assembling devices, comprising a plurality of actuated devices disposed on a substrate, each of the actuated devices comprising a first electrode disposed on and electrically connect to the substrate, a connecting pad disposed on the substrate, an electro-active polymer layer comprising a first surface disposed on the connecting pad and a second surface, and a second electrode disposed on the second surface of the electro-active polymer layer and electrically connected to the substrate.

Apparatus for assembling devices

An electromagnetic wave transmission board comprises a substrate. The substrate comprises a first dielectric layer and a second dielectric layer, and the first dielectric layer is stacked on the second dielectric layer. The first dielectric layer and the second dielectric layer together form a wave guiding space. The wave guiding space is configured for transmitting electromagnetic wave.

Electromagnetic wave transmission board and differential electromagnetic wave transmission board

A fabricating method of a semiconductor light emitting device includes disposing a plurality of non-conductive walls on a substrate. An alignment position is formed between every two adjacent non-conductive walls. A plurality of semiconductor light emitting units on a first carrier board are respectively aligned to the alignment positions. The semiconductor light emitting units are divided into a plurality of groups. The semiconductor light emitting units in one of the groups are dissociated from the first carrier board. Thus, the semiconductor light emitting units in the group fall into the corresponding alignment positions due to gravity. Each of the semiconductor light emitting units is electrically connected with the substrate through a first electrode. A conductive layer is formed on the semiconductor light emitting units. Accordingly, the semiconductor light emitting units are electrically connected together to the conductive layer through second electrodes.

Fabricating method of a semiconductor light emitting device

The disclosure provides a method and a system for multi-lens module alignment, adapted to perform alignment on a multi-lens module having at least a first lens and a second lens during its manufacturing stage, where the method includes the following steps. A calibration object is first captured by using the first lens and the second lens to accordingly generate intrinsic parameters and external parameters of the first lens and the second lens, where the external parameters of the first lens and the second lens are associated with a common reference coordinate system. A target object is next captured by using the first lens and the second lens, and captured images of the target object are processed by using the intrinsic parameters and the external parameters to generate rectified images. The first lens and the second lens are adjusted and aligned according to the rectified images.

Method and system for multi-lens module alignment

A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.

Semiconductor light emitting device and fabricating method thereof

In an embodiment, a light emitting device comprises a light emitting diode chip and a spherical extending electrode. The light emitting diode chip includes a semiconductor epitaxial structure, a first electrode and a second electrode. The first electrode and the second electrode are disposed on two opposite sides of the semiconductor epitaxial structure, respectively. The first electrode is disposed between the semiconductor epitaxial structure and the spherical extending electrode, and the spherical extending electrode is electrically connected to the semiconductor epitaxial structure electrically through the first electrode. The volume of the spherical extending electrode is greater than that of the light emitting diode chip.

Light-emitting device and manufacturing method of a display

A first back surface of a first chip faces toward a carrier. A first active surface of the first chip has first pads and a first insulting layer thereon. A second chip is disposed on the first chip and electrically connected to the carrier. A second active surface of the second chip faces toward the first active surface. The second active surface has second pads and a second insulting layer thereon. Bumps connect the first and second pads. First and second daisy chain circuits are respectively disposed on the first and second insulting layers. Hetero thermoelectric device pairs are disposed between the first and second chips and connected in series by the first and second daisy chain circuits, and constitute a circuit with an external device. First and second heat sinks are respectively disposed on a second surface of the carrier and a second back surface of the second chip.

Chip package structure

This disclosure related to a stacked chip package structure having a sloped dam structure located on the substrate and beside the chip stack. The dam structure can facilitate the dispensing process of the underfill.

Three dimensional stacked chip package structure

An electrode connection structure of a speaker unit is provided. The speaker unit includes at least one electrode layer, which is made of a conductive material, or made of a non-conductive material with a conductive layer formed on a surface thereof. The electrode connection structure includes a conductive electrode and an adhesive material. The conductive electrode is used for providing power supply signals for the speaker unit to generate sounds. The adhesive material adheres the conductive electrode in parallel with a surface of the electrode layer. The adhesive material has adhesive characteristics, so as to electrically connect the conductive electrode and the electrode layer, in which the adhesive material is adhered to a side of the surface of the electrode layer closely adjacent to the conductive electrode with a certain area.

Electrode connection structure of speaker unit

An assembly structure of flat speaker including at least two speaker units and one connecting structure is provided. Each speaker unit includes a first electrode, a vibrating film, and a second electrode. The connecting structure includes two conductive layers, and a first insulating layer. A first conductive layer is connected the first electrode through a contact area, and each has a first length and a third length parallel to the contact area. A second conductive layer is connected the second electrode through a contact area, and each has a second length and a fourth, a fifth length parallel to the contact area. The third length is less than or equal to a sum of the first lengths of the speaker units. A sum of the third, the fourth, and the fifth length is less than or equal to a sum of the first and second lengths.

Growing community of inventors

Chiayi, Taiwan

Yu-Wei Huang