Silicon Motion, Inc.

Yu-Wei Chyan

Jiyun-Wei Lin

Li-Shuo Hsiao

Ping-Yen Tsai

A method and apparatus for performing automatic power control in a memory device are provided. The method includes: during an initialization phase of the memory device, performing signal level detection on a reference clock request signal to determine whether the reference clock request signal is at a first predetermined voltage level or a second predetermined voltage level, for performing the automatic power control for the memory device, wherein the reference clock request signal is received through an IO pad; and according to a logic value carried by an input signal of a selective regulation circuit (SRC), performing selective power control to generate a secondary power voltage according to a main power voltage, wherein the selective power control makes the secondary power voltage be either equal to the main power voltage or a regulated voltage of the main power voltage in response to the logic value carried by the input signal.

Method and apparatus for performing automatic power control in a memory device with aid of associated detection during initialization phase

A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operation to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.

Method for controlling operations of memory device, associated memory device and controller thereof, and associated electronic device

A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operations to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.

A memory controller including a first transmittal module, a clock pin, a second transmittal module, a first control module and a second control module is disclosed. The first transmittal module includes a specific pin. The clock pin receives a clock signal. The first transmittal module and the clock pin constitute an embedded multimedia card (eMMC) interface. The second transmittal module and the clock pin constitute a universal flash storage (UFS) interface. The first control module communicates with an external host via the first transmittal module according to the clock signal when a level of the specific pin is at a first level. The second control module communicates with the external host via the second transmittal module according to the clock signal when the level of the specific pin is at a second level. The first level exceeds the second level.

Memory controller and accessing system utilizing the same

A control device coupled between a first memory and a second memory and including an execution unit, a first storage unit, a second storage unit, a selection unit and a processing unit is disclosed. The execution unit executes a specific instruction set to access the first and the second memories. The first storage unit is configured to store a first instruction set. The second storage unit is configured to store a second instruction set. The selection unit outputs one of the first and the second instruction sets to serve as the specific instruction set according to a control signal. The processing unit generates the control signal according to an execution state of the execution unit.

Control device and access system utilizing the same

An embedded MultiMediaCard (eMMC), an electronic device equipped with an eMMC and an eMMC engineering board are disclosed. The eMMC includes an eMMC substrate plate, a plurality of solder balls and an eMMC chip. The solder balls are soldered to the eMMC substrate plate, and, one of the solder balls is designed as a security protection enable/disable solder ball. The eMMC chip is bound to the eMMC substrate plate, and, the eMMC chip has a security protection enable/disable pin electrically connected to the security protection enable/disable solder ball. The security protection enable/disable pin is internally pulled high by the eMMC chip when the security protection enable/disable solder ball is floating. When the security protection enable/disable solder ball is coupled to ground, the eMMC is protected from software-based attacks.

Embedded flash memory card and electronic device using the same, and engineering board for embedded flash memory card

A method for enhancing verification efficiency regarding error handling mechanism of a controller of a Flash memory includes: providing an error generation module, for generating errors; and triggering the error generation module to actively generate errors of at least one specific type in order to increase an error rate corresponding to the specific type. An associated memory device and the controller thereof are provided, where the controller includes: a ROM arranged to store a program code; a microprocessor arranged to execute the program code to control access to the Flash memory and manage a plurality of blocks, and further enhance the verification efficiency regarding error handling mechanism of the controller; and an error generation module arranged to generate errors. The controller that executes the program code by utilizing the microprocessor triggers the error generation module to actively generate errors of at least one specific type to increase an error rate.

Operational method of a controller of a flash memory, and associated memory device and controller thereof

A semiconductor chip package structure is described. The semiconductor chip package structure comprises a first chip, which is operated through a first power connection, having a central region and a marginal region. The first chip comprises a plurality of first and second power bonding pads disposed in a marginal region on the top of the first chip. A first power ring and a second power ring are disposed on the first chip, wherein the first and second power rings are respectively electrically connected to the first and second power bonding pads. A second chip, which is operated through a second power connection, is mounted on the central region of the first chip, wherein the second chip comprises a plurality of power bonding pads thereon. A plurality of second bonding wires are electrically connected to the power bonding pads and the second power bonding pads, respectively.

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Hsinchu, Taiwan

Yu-Wei Chyan