Sino-American Silicon Products Inc.

Yu-Tsung Chiang

Wen-Ching Hsu

Wen-Huai Yu

Chung-Wen Lan

Yu-Min Yang

Sung-Lin Hsu

Cheng-Jui Yang

Wen-Chieh Lan

Kai-Yuan Pai

Chan-Lu Su

I-Ching Li

Ming-Kung Hsiao

Hung-Sheng Chou

A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.

Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles

A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.

Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom

A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm&#x2dc;10%/mm.

Crystalline silicon ingot including nucleation promotion layer

Method of fabricating crystalline silicon ingot including nucleation promotion layer

The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.

Seed used for crystalline silicon ingot casting

Growing community of inventors

Hsinchu, Taiwan

Yu-Tsung Chiang