Showa Denko K.k.

Yu Tokunaga

Atsushi Matsumura

Provided are a light-emitting diode which prevents degradation of reflectance and which enables high-luminosity light emission, and its manufacturing method. Such a light-emitting diode includes a substrate () upon which are provided, in this order, a reflecting layer (), a transparent film () wherein multiple ohmic contact electrodes () are embedded at intervals, and a compound semiconductor layer () including a current diffusion layer () and a light-emitting layer () in this order. The periphery of the surface of each ohmic contact electrode () on the substrate () side are covered by the transparent film (), and the ohmic contact electrodes () contact the reflecting layer () and the current diffusion layer ().

Light-emitting diode and method of manufacturing same

In a light-emitting diode, a plurality of dot-shaped ohmic contact electrodes are provided between a metal reflective film and a compound semiconductor layer, an ohmic electrode and a surface electrode composed of a pad portion and a plurality of linear portions connected to the pad portion are provided in that order on the opposite side of the compound semiconductor layer from the semiconductor substrate, the surface of the ohmic electrode is covered with the linear portions, the ohmic contact electrodes and the ohmic electrode are formed in positions that do not overlap with the pad portion in plan view, and among the plurality of ohmic contact electrodes, 5% or more and 40% or less of the ohmic contact electrodes are disposed in positions that overlap with the linear portions in plan view.

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Chichibu, Japan

Yu Tokunaga