Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Ting Weng

Chia-Wei Chang

Chiung Wen Hsu

Chao-Cheng Chen

Yu-Chi Lin

Hsien-Chung Huang

Ting-Chung Wang

Mei-Ju Kuo

Chiung-Wen Hsu

A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.

Etch profile control of isolation trench

A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.

Semiconductor device and manufacturing method thereof

Semiconductor device with fin structures and manufacturing method thereof

Manufacturing of semiconductor fin structure and manufacturing method of semiconductor device

Growing community of inventors

Taichung, Taiwan

Yu-Ting Weng