Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Tao Yang

Yung-Chow Peng

Wen-Shen Chou

Yung-Hsu Chuang

Jie-Ren Huang

Yun-Ru Chen

Bindu Madhavi Kasina

Chih-Chiang Chang

Po-Zeng Kang

Chih-chiang Chang

In an integrated circuit, the gates of a first high-threshold transistor and a first low-threshold transistor are connected together, and the gates of a second high-threshold transistor and a second low-threshold transistor are connected together. The drain of the first high-threshold transistor is conductively connected to the source of the first low-threshold transistor, and the drain of the second high-threshold transistor is conductively connected to the source of the second low-threshold transistor. The gates of the first low-threshold transistor and the second low-threshold transistor are conductively connected to the drain of the first low-threshold transistor. The threshold-voltage of the first high-threshold transistor is larger than a threshold-voltage of the first low-threshold transistor. The threshold-voltage of the second high-threshold transistor is larger than a threshold-voltage of the second low-threshold transistor.

Stack-gate circuit

A method of generating a layout design of an integrated circuit includes forming an active zone and partitioning the active zone into a center portion between a first side portion and a second side portion. The method also includes forming a plurality of gate-strips and forming a routing line. The plurality of gate-strips includes a first group of gate-strips intersecting the active zone over first channel regions in the center portion, a second group of gate-strips intersecting the active zone over second channel regions in the center portion, a third group of gate-strips intersecting the active zone over third channel regions in the first side portion, and a fourth group of gate-strips intersecting the active zone over fourth channel regions in the second side portion.

Techniques for generating one or more non-final layouts for an analog integrated circuit are disclosed. The techniques include generating a non-final layout of an analog integrated circuit based on device specifications, partitioning the non-final layout into a plurality of subcells, merging the verified sub-cells to form a merged layout of the analog integrated circuit, and performing quality control checks on the merged layout. Additionally or alternatively, generating the non-final layout can include determining an allowable spacing between adjacent cells of different cell types or inserting one or more filler cells into a filler zone in the non-final layout.

Automatic generation of layouts for analog integrated circuits

Systems, methods, and devices are disclosed herein for developing a cell design. Operations of a plurality of electrical cells are simulated to collect a plurality of electrical parameters. A machine learning model is trained using the plurality of electrical parameters. The trained machine learning model receives data having cell layout design constraints. The trained machine learning model determines a cell layout for the received data based on the plurality of electrical parameters. The cell layout is provided for further characterization of electrical performance within the cell layout design constraints.

Pre-characterization mixed-signal design, placement, and routing using machine learning

Various techniques are disclosed for automatically generating sub-cells for a non-final layout of an analog integrated circuit. Device specifications and partition information for the analog integrated circuit is received. Based on the device specifications and the partition information, first cut locations for a first set of cuts to be made along a first direction of a non-final layout of the analog integrated circuit and second cut locations for a second set of cuts to be made along a second direction in the non-final layout are determined. The first set of cuts are made in the non-final layout at the cut locations to produce a temporary layout. The second set of cuts are made in the temporary layout at the cut locations to produce a plurality of sub-cells.

Automatic generation of sub-cells for an analog integrated circuit

A semiconductor device including a first active region having a first active configuration, a second active region having a second, and different, active configuration, and a transition cell arranged between the first and second active regions in which the transition cell has a transitional configuration that is different from and compatible with both the first active configuration and the second active configuration.

Transition cells for advanced technology processes

A device includes a first cell active area asymmetrically positioned in a first device column between a first barrier line and a second barrier line, a second cell active area asymmetrically positioned in a second device column between the first barrier line and a third barrier line, where the first cell has a first cell length in a first direction perpendicular to the first barrier line which is three times a second cell length in the first direction. The first cell active area and the second cell active area are a first distance from the first barrier line, and the first cell active area is a second distance from the second barrier line, and the second cell active area is the second distance away from the third barrier line.

Integrated circuit with asymmetric mirrored layout analog cells

Techniques for generating one or more non-final layouts for an analog integrated circuit are disclosed. The techniques include generating a non-final layout of an analog integrated circuit based on device specifications, partitioning the non-final layout into a plurality of sub-cells, merging the verified sub-cells to form a merged layout of the analog integrated circuit, and performing quality control checks on the merged layout. Additionally or alternatively, generating the non-final layout can include determining an allowable spacing between adjacent cells of different cell types or inserting one or more filler cells into a filler zone in the non-final layout.

An integrated circuit includes an active zone having a center portion adjoining a first side portion and a second side portion. A first transistor having a gate formed over one of the first channel regions in the center portion has a first threshold-voltage. A second transistor having a gate formed over one of the second channel regions in the center portion has a second threshold-voltage. A third transistor having a gate formed over one of the third channel regions in the first side portion has a third threshold-voltage. A fourth transistor having a gate formed over one of the fourth channel regions in the second side portion has a fourth threshold-voltage. A first average of the first threshold-voltage and the second threshold-voltage is larger than a second average of the third threshold-voltage and the fourth threshold-voltage by a predetermined threshold-voltage offset.

A method includes: generating a design layout according to a circuit design by placing first and second components; identifying a first area and a second area between the first component and the second component; and determining a first cell configuration of the first component according to the first component and a second cell configuration of the second component according to the second component. The method further includes selecting a first cell comprising a first capacitor from a cell library, wherein the first cell has a third cell configuration identical to the first cell configuration; selecting a second cell comprising a second capacitor from the cell library, wherein the second cell has a fourth cell configuration identical to the second cell configuration; placing a first cell array formed of the first cell in the first area; and placing a second cell array formed of the second cell in the second area.

Semiconductor device including regions for reducing density gradient effect and method of forming the same

A method for fabricating an integrated circuit is provided. The method includes: receiving a cell schematic of a unit cell of the integrated circuit; when an intrinsic gain of a transistor of the unit cell falls outside a predetermined range of gain values, revising a set of parameter values for a set of size parameters of the unit cell in the cell schematic, wherein the intrinsic gain of the transistor of the unit cell characterized by the revised set of parameter values falls within the predetermined range of gain values; generating a cell layout of the unit cell according to the cell schematic indicating the revised set of parameter values for the set of size parameters; and fabricating the integrated circuit according to the cell layout of the unit cell.

Growing community of inventors

Hsinchu County, Taiwan

Yu-Tao Yang