Magnachip Semiconductor, Inc.

Key Foundry Co., Ltd

Yu Shin Ryu

Bo Seok Oh

Tae Hoon Lee

Francois Hebert

Yon Sup Pang

Seong Min Cho

Ju Ho Kim

Jin Yeong Son

Jae Hyung Jang

Hee Baeg An

Seong Woo Lee

The present examples relate to a semiconductor device used in an electric device or high voltage device. The present examples improve Rby minimizing drift region resistance by satisfying breakdown voltage by improving the structure of a drift region through which current flows in a semiconductor device to provide optimal results. Moreover, a high frequency application achieves useful results by reducing a gate charge Qfor an identical device pitch to that of an alternative technology.

Semiconductor device

Provided are a low-cost semiconductor device manufacturing method and a semiconductor device made using the method. The method includes forming multiple body regions in a semiconductor substrate, forming multiple gate insulating layers and multiple gate electrodes in the body region; implementing a blanket ion implantation in an entire surface of the substrate to form a low concentration doping region (LDD region) in the body region without a mask, forming a spacer at a side wall of the gate electrode, and implementing a high concentration ion implantation to form a high concentration source region and a high concentration drain region around the LDD region. According to the examples, devices have favorable electrical characteristics and at the same time, manufacturing costs are reduced. Since, when forming high concentration source region and drain regions, tilt and rotation co-implants are applied, an LDD masking step is potentially omitted.

Low-cost semiconductor device manufacturing method

A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region disposed in the well region, a gate electrode disposed above the well region, a thin gate insulating layer and a thick gate insulating layer disposed under the gate electrode, the thick gate insulating layer being disclosed closer to the drain region than the thin gate insulating layer, and an extended drain junction region disposed below the gate electrode.

Semiconductor device and method for manufacturing the same

A Hall sensor with improved doping profile is disclosed. The Hall sensor includes a semiconductor substrate, a sensing region formed on the substrate, an isolation region formed on the sensing region, and a high concentration doping region formed on an upper portion of the sensing region.

Hall sensor with improved doping profile

Growing community of inventors

Daejeon-si, South Korea

Yu Shin Ryu