Samsung Sdi Co., Inc.

Cheil Industries Inc.

Yu-Shin Park

Hyun-Ji Song

Yoo-Jeong Choi

Yun-Jun Kim

Young-Min Kim

You-Jung Park

Chung-Heon Lee

Yong-Woon Yoon

Joon-Young Moon

Tae-ho Kim

Hyo-Young Kwon

Hea-Jung Kim

Seung-Hee Hong

Go-Un Kim

Seung-Wook Shin

Yo-Choul Park

Sang-Kyun Kim

Dong-Geun Lee

Ran Namgung

Youn-Hee Nam

Dominea Rathwell

Seulgi Jeong

Seung-Hyun Kim

Soo-Hyoun Mun

Hyeon-Il Jung

Yu-Mi Heo

Byeri Yoon

Sun-Hae Kang

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A monomer, an organic layer composition including the monomer, an organic layer, and a method of forming patterns, the monomer being represented by Chemical Formula 1: 

Monomer, organic layer composition, organic layer, and method of forming patterns

An organic layer composition, an organic layer, and associated methods, the composition including a polymer that includes a moiety represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, and a solvent, 

Organic layer composition, organic layer, and method of forming patterns

A polymer includes a structural unit represented by Chemical Formula 1 and an organic layer composition including the same. wherein in Chemical Formula 1, A is a carbon cyclic group including at least one hetero atom, B is one of groups in Group 1, where Arto Ar, Rto R, L and m are as defined in the specification and * is a linking point. When the carbon cyclic group includes at least two hetero atoms when the carbon cyclic group includes a pentagon cyclic moiety and the pentagon cyclic moiety includes a nitrogen atom (N) as a hetero atom, and the at least two hetero atoms are the same or different: 

Polymer, organic layer composition, organic layer, and method of forming patterns

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

A hardmask composition and a method of forming patterns, the composition including a solvent; and a polymer including a moiety represented by the following Chemical Formula 1, 

Hardmask composition and method of forming patterns using the hardmask composition

Growing community of inventors

Suwon-si, South Korea

Yu-Shin Park