Lite-on Technology Corporation

Other

Yu-Shan Wu

Shih-Jia Zeng

Hsie-Chia Chang

Jen-Chien Fu

Shih-Hsiung Chan

Jian-Shihn Tsang

Jan-Dar Guo

A solid state storage device and sensing voltage setting method thereof are provided, and the method includes following steps. A predetermined read voltage of the memory cells is adjusted to obtain a plurality of detection read voltages. The predetermined read voltage and the detection read voltages are respectively applied to a plurality of memory cells in order to read a plurality of verification bit data. A plurality of statistical parametric values between the predetermined read voltage and the detection read voltages adjacent to each other is calculated and recorded according to the verification bit data corresponding to the predetermined read voltage and the detection read voltages. An optimized read voltage is obtained according to the statistical parametric values.

Solid state storage device and sensing voltage setting method thereof

A group classification method includes the following steps. Firstly, a voltage shift parameter table is established. The voltage shift parameter table includes a first positional parameter table corresponding to a first neighboring cell. Then, MICI patterns are determined according to N neighboring cells having a significant ICI effect. If the central cell has a first storing state, Mcentral cell threshold voltage shifts corresponding to the MICI patterns are determined according to the voltage shift parameter table, and the first storing state is divided into plural sub-regions. Afterwards, the central cells corresponding to a first number of ICI patterns are classified into a first group of the first storing state. The central cell threshold voltage shifts corresponding to the first number of ICI patterns lie in a first sub-region of the first storing state.

Group classification method for solid state storage device

The present invention pertains to a light emitting diode with high luminance and method therefor, and specially to a light emitting diode having a selectively highly-doped low resistive layer of InGaAlP. The selectively highly-doped low resistive layer may be grown by the current epitaxy technique. Therefore, the light emitting diode of the present application may be mass produced, thus having industrial applicability.

Light emitting diode with high luminance and method therefor

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Hsinchu, Taiwan

Yu-Shan Wu