United Microelectronics Corp.

United Integrated Circuits Corp.

Yu-Shan Tai

Hsueh-Hao Shih

Kuen-Chu Chen

H T Yang

Tien-Jui Liu

Chun-Shen Wu

A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about6-126-20times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Qand by reducing the leakage current of the gate oxide.

Method for fabricating gate oxide

A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about 6-12 times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Q.sub.bd and by reducing the leakage current of the gate oxide.

A horizontal oxidation furnace injector comprising an inner tube and an outer tube. The inner tube has an inner tube inlet and an inner tube outlet. The inner tube inlet is used for receiving a first gas and the inner tube outlet is used for outputting the first gas. The outer tube has a branch tube and an outer tube outlet. The branch tube further includes an outer tube inlet. The outer tube inlet is used for receiving a second gas, and the outer tube outlet is used for outputting the secord gas. Furthermore, the outer tube outlet and the inner tube outlet are at the same end. In addition, part of the inner tube is enclosed by the outer tube of the injector while the remainder of the inner tube is exposed, and the inner tube has no bends.

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Hsinchu, Taiwan

Yu-Shan Tai