Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Korea Institute of Ocean Science & Technology

Yu Seung Kim

Pun Jae Choi

Jin Bock Lee

Sang Yeob Song

Sang Bum Lee

Tae Hyung Kim

Young Sik Kim

Hyun Soo Kim

Jin Hyun Lee

In Ku Kang

Tae Hyun Kim

Dong Ho Jang

Jong In Yang

Si Hyuk Lee

Cheol Soo Sone

Joon Seop Kwak

Ki Man Kang

Seung Woo Choi

Soo Jin Jung

Gi Bum Kim

Eun Jung Hyun

Jung Ja Yang

Youn Joon Sung

Dae Cheon Kim

Gyeong Seon Park

Hyung Duk Ko

Dushyant Vipradas

Kwang Ki Choi

Shi Young Lee

Byung Kwun Lee

Gil Lim Yoon

An electronic device includes a communication circuit that communicates with an external device, a memory configured to store first setting data corresponding to a first time period, and a processor operatively connected with the communication circuit and the memory. The processor receives second setting data corresponding to a second time period from the external device through the communication circuit if a specified time point is reached, deletes at least a portion of the first setting data based on whether a status of a user is a login status or a logout status, and applies the second setting data to the electronic device.

Method and electronic device for updating configuration settings

An electronic device and a method for operating the electronic device are provided. The method includes obtaining first information in a first zone of the electronic device, extracting second information included in the first information in the first zone of the electronic device, and storing the second information in a second zone of the electronic device that has a higher level of security than a level of security of the first zone.

Electronic device and method for processing secure information

There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Method of manufacturing semiconductor light emitting device

An electronic device and a method for commonly using the electronic device are provided. The electronic device includes a housing, a memory disposed in the housing, a communication circuit in communication with at least one external device, and a processor electrically connected to the memory and the communication circuit. The processor is configured to control for installing at least one application on the memory in response to a login request from a user, receiving a logout request from the user after the at least one application is installed, transmitting data associated with the at least one application to the at least one external device using the communication circuit in response to the logout request, and deleting at least a portion of the at least one application and the data associated with the at least one application from the memory.

Electronic device and method for commonly using the same

Semiconductor light emitting device

An electronic device and authentication processing method for operating the electronic device is provided. The authentication processing method includes transmitting to an external server credential information input in the electronic device through a user interface, receiving an authentication request of the credential information, processing the authentication request based on the credential information stored in the electronic device, or determining whether to transmit the authentication request through the communication module based on the credential information stored in the external server.

Authentication processing method and electronic device for supporting the same

In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.

Semiconductor light emitting device and fabrication method thereof

A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Semiconductor light emitting device and method of manufacturing the same

Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.

Semiconductor light emitting device and method for fabricating the same

The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.

Growing community of inventors

Gyunggi-do, South Korea

Yu Seung Kim