Texas Instruments Corporation

Yu-Sang Lin

Michael J McNutt

Robin C Sarma

A method for measuring a capacitance of a device under test is provided that includes selectively charging and discharging a first conductor with a first set of p and n element-pairs in response to a voltage potential applied to the first set of p and n element-pairs. The method further includes selectively charging and discharging a second conductor with a second set of p and n element-pairs in response to a voltage potential applied to the second set of p and n element-pairs. Currents are measured at drains associated with the first set of p element-pairs as the first and second conductors charge and discharge such that a capacitance associated with the first conductor may be determined that is based on the drain currents.

System and method for measuring a capacitance of a conductor

A method for measuring a capacitance of a semiconductor is provided that includes positioning a measurement circuit in a scribe line area associated with the semiconductor. The scribe line area is indicative of a delineation that separates one or more portions of the semiconductor. A capacitance of one or more elements included within the one or more portions of the semiconductor is then measured using the measurement circuit. The method also includes comparing the capacitance measurement of the one or more elements included within the one or more portions of the semiconductor to a reference set of capacitance values such that a parameter associated with a manufacturing process that generated the semiconductor may be checked.

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Irvine, CA, United States of America

Yu-Sang Lin