Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-San Chien

Kuo-Hua Pan

Chun-Sheng Liang

Hsin-Che Chiang

Jhon-Jhy Liaw

Wei-Chih Kao

Ta-Chun Lin

Provided is a semiconductor device including a substrate, one hybrid fin, a gate, and a dielectric structure. The substrate includes at least two fins. The hybrid fin is disposed between the at least two fins. The gate covers portions of the at least two fins and the hybrid fin. The dielectric structure lands on the hybrid fin to divide the gate into two segment. The two segments are electrically isolated to each other by the dielectric structure and the hybrid fin. The hybrid fin includes a first portion, disposed between the two segments of the gate; and a second portion, disposed aside the first portion, wherein a top surface of the second portion is lower than a top surface of the first portion.

Semiconductor device and method of forming the same

An embodiment method includes: forming a semiconductor liner layer on exposed surfaces of a fin structure that extends above a dielectric isolation structure disposed over a substrate; forming a first capping layer to laterally surround a bottom portion of the semiconductor liner layer; forming a second capping layer over an upper portion of the semiconductor liner layer; and annealing the fin structure having the semiconductor liner layer, the first capping layer, and the second capping layer thereon, the annealing driving a dopant from the semiconductor liner layer into the fin structure, wherein a dopant concentration profile in a bottom portion of the fin structure is different from a dopant concentration profile in an upper portion of the fin structure.

Semiconductor device structure with uniform threshold voltage distribution and method of forming the same

An embodiment method includes forming a semiconductor liner layer on a first fin structure and on a second fin structure and forming a first capping layer on the semiconductor liner layer disposed on the first fin structure. The method further includes forming a second capping layer on the semiconductor liner layer disposed on the first fin structure, where a composition of the first capping layer is different from a composition of the second capping layer. The method additionally includes performing a thermal process on the first capping layer, the second capping layer, and the semiconductor liner layer to form a first channel region in the first fin structure and a second channel region in the second fin structure. A concentration profile of a material of the first channel region is different from a concentration profile of a material of the second channel region.

Semiconductor device structure having a plurality of threshold voltages and method of forming the same

Semiconductor device

Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a plurality of hybrid fins, a gate, and a dielectric structure. The substrate includes a plurality of fins. The plurality of hybrid fins are respectively disposed between the plurality of fins. The gate covers portions of the plurality of fins and the plurality of hybrid fins. The dielectric structure lands on one of the plurality of hybrid fins to divide the gate into two segment. The two segments are electrically isolated to each other by the dielectric structure and the one of the plurality of hybrid fins.

A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a first fin structure with a first composition and a second fin structure with a second composition, oxidizing the first fin structure to form a first oxide layer and oxidizing the second fin structure to form a second oxide layer, removing the second oxide layer formed on the second fin structure, oxidizing the second fin structure to form a third oxide layer over the second fin structure, and forming a first metal gate electrode layer over the first oxide layer and a second metal gate electrode layer over the third oxide layer.

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Hsinchu, Taiwan

Yu-San Chien