United Microelectronics Corp.

Yu-Ren Wang

Chun-Wei Yu

Chueh-Yang Liu

Kuang-Hsiu Chen

Chien-Liang Lin

Ying-Wei Yen

Chia-Ming Kuo

Yen-Hsing Chen

Yi-Liang Ye

Tsuo-Wen Lu

Po-Jen Chuang

Tsung-Mu Yang

Fu-Jung Chuang

Yu-Ying Lin

Yu-Ming Hsu

Neng-Hui Yang

Keng-Jen Lin

Hsu Ting

Tsai-Yu Wen

Shao-Wei Wang

Yu-Chi Wang

Guan-Wei Huang

Sung-Yuan Tsai

Te-Lin Sun

Chun-Hsien Lin

Chin-Cheng Chien

Yi-Hui Lin

Chi-Mao Hsu

I-Ming Tseng

Ching-Ling Lin

Wen-An Liang

Ted Ming-Lang Guo

Chi-Hsuan Tang

Shi-You Liu

I-Cheng Hu

Chih-Chung Chen

Yuan-Yu Chung

Shui-Yen Lu

Shu-Yen Chan

Chun-Jen Chen

Wen-Yi Teng

Szu-Hao Lai

Chia-Wei Chang

Yu Shu Lin

Kuan Hsuan Ku

Chun Yao Yang

Ping-Wei Huang

Yu-Shu Lin

Fu-Yu Tsai

Chin-Sheng Yang

Chiu-Hsien Yeh

Po-Chun Chen

Chun-Ling Lin

Chih-Hsun Lin

Zhen Wu

Nan-Yuan Huang

Hsiang-Ying Wang

Shih-Cheng Chen

Yu-Tung Hsiao

Ya-Yin Hsiao

Chia-Yuan Chang

Tai-Yen Lin

Che-Nan Tsai

Gin-Chen Huang

Shih-Hung Tsai

Kuo-Tai Huang

Chun-Yi Lee

Chih-Wei Yang

Tien-Wei Yu

Chung-Fu Chang

Wei-Jen Chen

Chia-Lung Chang

Jei-Ming Chen

Ming-Hua Chang

Shao-Hua Hsu

Tsai-Fu Hsiao

Chun-Yao Yang

Yi-Ching Wu

Wen-Jiun Shen

Hao-Hsuan Chang

Chun-Wei Hsu

Tien-I Wu

Hsin-Kuo Hsu

I-Ming Lai

Chao-Nan Chen

Yu-Kun Chen

Chun-Liang Kuo

Kai-Hsiang Wang

Shu-Ming Yeh

Kun-Yuan Lo

Yu-Min Lin

Shan Ye

Chia-Wei Hsu

Ya-Lun Cheng

Tony E T Liu

Yi-Chia Lee

Chih-Feng Ku

Tsung-Yu Hou

Wu-Chun Kao

Ying-Hsuan Li

A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode on the p-type semiconductor layer, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode. Preferably, the buffer layer further includes a bottom portion having a first carbon concentration and a top portion having a second carbon concentration, in which the second carbon concentration is less than the first carbon concentration and a thickness of the bottom portion is less than a thickness of the top portion.

High electron mobility transistor and method for fabricating the same

A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.

Method of fabricating semiconductor device having epitaxial structure

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Semiconductor device and method for fabricating the same

An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

High electron mobility transistor

A semiconductor structure includes a substrate including a device region, a peripheral region surrounding the device region, and a transition region disposed between the device region and the peripheral region. An epitaxial layer is disposed on the device region, the peripheral region, and the transition region. A first portion of the epitaxial layer on the peripheral region has a poly-crystal structure.

Semiconductor structure

A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.

High electron mobility transistor and method of forming the same

A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

Semiconductor device with strain relaxed layer

A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.

Method for forming semiconductor device

A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.

Semiconductor device and fabrication method thereof

A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.

A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P&#x2014;GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

High electron mobility transistor and fabrication method thereof

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Tainan, Taiwan

Yu-Ren Wang