Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Ren Chen

Chung-Shi Liu

Hung-Jui Kuo

Chia-Hui Chen

Yi-Yang Lei

Qingchao Meng

Guang-Cheng Wang

Szu-Yu Yeh

Bright Li

Kuo-Ji Chen

Ming Hung Tseng

Jui-Feng Kuan

Wen-Ju Preet Yang

Yi-Jen Lai

Wei-Yi Hu

Po-Hsiang Lan

Jian-Yi Li

Ming-Hsin Yu

Chih Chi Hsiao

Jill Liu

Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of contact pads over a substrate, and forming an insulating material over the plurality of contact pads and the substrate. The insulating material is patterned to form an opening over each of the plurality of contact pads, and the plurality of contact pads is cleaned. The method includes forming an under-ball metallization (UBM) structure over the plurality of contact pads and portions of the insulating material. Cleaning the plurality of contact pads recesses a top surface of each of the plurality of contact pads.

Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices

A voltage level shift circuit comprises a first pair of transistors and a second pair of transistors. A first transistor of the second pair of transistors is coupled with an input signal terminal. A second transistor of the transistors of the second pair of transistors is coupled with an inverted input signal terminal. The transistors of the second pair of transistors are cross-coupled with the transistors of the first pair of transistors. The voltage level shift circuit also comprises a third pair of transistors. The transistors of the third pair of transistors are coupled with the transistors of the first pair of transistors and the transistors of the second pair of transistors. A first transistor of the third pair of transistors is directly coupled with an output signal terminal and second transistor of the third pair of transistors is directly coupled with an inverted output signal terminal.

Voltage level shift circuit for multiple voltage integrated circuits

A driving circuit includes a common well. The driving circuit further includes a first output buffer having a bulk connected to the common well, the first output buffer having a first terminal configured to receive a first signal, and having a second terminal connected to the common well. The driving circuit further includes a second output buffer having a bulk connected to the common well, the second output buffer having a first terminal configured to receive the first signal, wherein a second terminal of the second output buffer is disconnected from the common well.

Common well bias design for a driving circuit and method of using same

One or more systems and techniques for communicating a signal between a first chip and a second chip using one or more circuits are provided. If the signal corresponds to a first voltage, one or more voltages are provided to one or more locations and a capacitive load is charged using a pull-up driver that is connected to a power supply. If the signal corresponds to a second voltage, one or more voltages are provided to one or more locations and the capacitive load is discharged using a pull-down driver that is connected to ground. When the first chip is powered off, a fail-safe mode is provided by configuring a cross control circuit to generate a bias to control one or more transistors.

Controlling voltage at pad

A multiple device voltage electrostatic discharge (ESD) clamp includes a trigger circuit, first and second inverters, and an ESD discharge path. The trigger circuit includes a resistor having a first terminal electrically connected to a first voltage supply node, and a capacitor having a first terminal electrically connected to a second voltage supply node. The first inverter has an input terminal electrically connected to second terminals of the resistor and the capacitor. The second inverter has a power terminal electrically connected to an output terminal of the first inverter. The ESD discharge path has a first end electrically connected to the first voltage supply node, and a second end electrically connected to a third voltage supply node, and includes a first transistor controlled by the first inverter, and a second transistor controlled by the second inverter.

Multiple device voltage electrostatic discharge clamp

In some embodiments, in a method for considering in-phase grouping for a voltage-dependent design rule, for a first net and a second net in a schematic, first data for obtaining the differences between first voltage values of the first and second nets, and between second voltage values of the first and second nets is provided. For each of the first and second nets, the first voltage value is larger than the second voltage value. A layout for the schematic is generated. In the layout, a relationship of a first shape and a second shape associated with the first and the second nets, respectively, is defined using the first data.

In-phase grouping for voltage-dependent design rule

A driving circuit includes a common well. The driving circuit further includes a first output buffer having a bulk connected to the common well, the first output buffer having a first terminal configured to receive a first signal, and having a second terminal connected to the common well. The driving circuit further includes a second output buffer having a bulk connected to the common well, the second output buffer having a first terminal configured to receive the first signal, wherein a second terminal of the second output buffer disconnected from the common well. The driving circuit further includes a first driver connected to the second terminal of the first output buffer and a second driver connected to the second terminal of the second output buffer.

Common well bias design for a driving circuit and method of using

Semiconductor devices, packaging methods and structures are disclosed. In one embodiment, a semiconductor device includes an integrated circuit die with a surface having a peripheral region and a central region. A plurality of bumps is disposed on the surface of the integrated circuit die in the peripheral region. A spacer is disposed on the surface of the integrated circuit die in the central region.

Semiconductor devices, packaging methods and structures

An over-driver, voltage level shift circuit for use with multiple voltage integrated circuits. The voltage level shift circuit includes a first pair of PMOS transistors, a second pair PMOS transistors and a third pair of PMOS transistors using a high supply voltage source VDDH and a low supply voltage source to voltage level shift input signals having a first voltage operating range to an output signal having a second voltage operating range higher then the first voltage operating range. Some embodiments include a fourth set of transistors and a fifth set of transistors to receive a medium supply voltage source VDDM between the high supply voltage source VDDH and a low supply voltage source and another set of input signals operating a voltage operating range different than the first operating range. The voltage level shift circuit selectably switches between a plurality of different voltage operating ranges for the second voltage operating range.

A level shifter system includes an inverting portion, a non-inverting portion and a cross latch output component. The inverting portion is configured to receive an inverting input, a supply voltage and to generate an intermediary inverting output. The non-inverting portion is configured to receive a non-inverting input, the supply voltage and to generate an intermediary non-inverting output. The cross latch output component is configured to drive the intermediary inverting and non-inverting outputs to inverting and non-inverting outputs, respectively. The inverting and non-inverting outputs are at selected upper and lower levels according to the inverting input and non-inverting inputs, respectively.

Growing community of inventors

Zhudong, Taiwan

Yu-Ren Chen