Shanghai Huali Microelectronics Corporation

Shanghai Huali Integrated Circuit Corporation

Sabic Global Technolgoies B.v.

Sabic Innovative Plastics IP B.v.

Covestro Deutschland Ag

Shpp Global Technologies B.v.

Covestro Polymers (china) Co., Ltd.

Yu Ren

Jin Xa Xu

Yukun Lv

Zaifeng Tang

Jian Ding

Ying Nan Li

Michael Erkelenz

Dake Shen

Ying Li

Timo Kuhlmann

Minjie Chen

Qing Guo

Xusheng Zhang

Qiyan Feng

Yaming Niu

Hsusheng Chang

Narong An

Peng Liu

Chunjie Zhang

Jin Xu

Quan Jing

Leith Wang

Kaiqu Ang

The present application discloses a method for manufacturing shallow trench isolation, comprising: step: performing first time etching on a semiconductor substrate by means of a dry etching process to form the shallow trench, wherein in the first time etching, metal ions are released from a dry etching process chamber and deposited on the inner surface of the shallow trench, and the metal ions diffuse and form a contamination layer; and step: performing second time etching on the semiconductor substrate exposed on the inner surface of the shallow trench by means of a wet etching process to remove the contamination layer on the inner surface of the shallow trench. In the present application, the metal ions released from the dry etching process chamber and deposited on the inner surface of the shallow trench during the dry etching of the shallow trench can be removed.

Method for manufacturing shallow trench isolation

The present application relates to a wafer transfer module in a semiconductor manufacturing machine, relating to semiconductor integrated circuit manufacturing machines, wherein two sets of transmitter/receivers are provide on sidewalls of the wafer transfer module to monitor the travel position of an elevator, two sets of transmitter/receivers are provide on the sidewalls of the wafer transfer module to monitor the position of a transfer arm, a signal received by the receiver is transmitted to a control system such that the control system determines, according to the travel position of the elevator and the transfer arm position, whether the transfer arm can obtain a to-be-transferred wafer, thereby preventing the problem of a wafer scratch caused by an elevator position deviation or a transfer arm position deviation.

Wafer transfer module and method thereof for transferring to-be-transferred wafer

The present application discloses a preventive maintenance method for a chamber of a metal etching machine. An optimized burning cleaning recipe is added before the chamber is opened, and metal substances remaining on the surface of an electrostatic chuck are removed by adopting a cleaning/pumping down multi-step alternate method. Before the chamber is opened for preventive maintenance, the phenomenon of metal particles remaining on the surface of the electrostatic chuck can be significantly improved, thus solving the downtime problem caused by abnormal backside helium and ensuring the stability of mass production.

Preventive maintenance method for chamber of metal etching machine

Compositions containing a polycarbonate and a linear and cyclic phenyl containing siloxanes are disclosed. Specifically, a composition comprising: (a) a branched polycarbonate resin, (b) a flame retardant, (c) at least one linear phenyl containing siloxane and at least one cyclic phenyl containing siloxane, and (d) a linear polycarbonate resin when said branched polycarbonate is less than 100% based upon weight percent of total polycarbonate in said composition, wherein the amounts of said branched and linear polycarbonate resins, said linear siloxanes and cyclic siloxanes, and flame retardant are in amounts effective to provide a molded article from said composition with a UL94 V0 p(FTP) value of 0.90 or greater at a thickness of between 1 mm and 2.5 mm or at 2.5 mm or at 1.5 mm or at 1 mm is disclosed. In addition, a composition comprising: (a) a linear polycarbonate resin, (b) a flame retardant, (c) at least one phenyl-containing linear siloxane and at least one phenyl-containing cyclic siloxane, wherein the amounts of said linear polycarbonate resins, said phenyl-containing linear siloxanes and said phenyl-containing cyclic siloxanes, and said flame retardant are in amounts effective to provide a molded article of said composition with a UL94 V0 p(FTP) value of 0.90 or greater at a thickness of between 1 mm and 2.5 mm or at 2.5 mm or at 1.5 mm or at 1 mm is disclosed.

Compositions and articles of manufacture containing siloxane

The invention disclosed a method for forming high aspect ratio patterning structure. Firstly, forming a dielectric film ashing stop layer, a first photoresist layer, a first hard mask layer and a second photoresist layer on a semiconductor substrate in turn. A second hard mask layer having a high etch selectivity ratio with the first photoresist layer is formed on top surface and sidewall of the pattern by utilizing a low temperature chemical vapor deposition process, which can be a protect for the pattern sidewall during the later etching process of the first photoresist layer. So, the cone-shaped or the bowling-shaped photoresist morphology caused by plasma bombardment can be avoided. Therefore, the problems of the insufficient of selectivity ratio, burrs at the edge of the pattern and larger critical dimension can be solved, and the implanted ions can be well distributed according to the design of the device.

Method for forming high aspect ratio patterning structure

The invention disclosed a method for forming shallow trenches of the dual active regions. Firstly, forming an etch stop layer on a semiconductor substrate; secondly, using a first accurate photomask to expose and develop the semiconductor substrate, until the etch stop layer has been exposed on the top of the first shallow trench regions and the second shallow trench regions; thirdly, etching the etch stop layer entirely in the exposed regions; fourthly, using a second photomask to expose and develop the first shallow trench regions which require a deeper etch depth of the trench than that of the second shallow trench regions; fifthly, etching and forming preliminary entirely depth in the first shallow trench regions, and then removing the second photomask; at last, taking the etch stop layer as a mask, and simultaneously etching the first shallow trench regions and the second shallow trench regions to form the first hallow trenches and the second shallow trenches having different depths. The invention has realized a low-cost photomask application and an optimization of the etching process by optimizing the photomask design.

Method for forming shallow trenches of the dual active regions

A method of etching a shallow trench is disclosed in the present invention. By removing the photoresist layer immediately at the end point of the hard mask layer etching and further using the improved process conditions etch the top of the substrate at the same time of the hard mask layer over-etching, such as a lower bias power, a higher pressure and a bigger polymer gases flow rate, the present invention has formed a smooth morphology on the top of the shallow trench. Therefore, the sharp corner appeared in the prior art is avoided by changing the start point of the silicon substrate etching, so as to fundamentally eliminate the leakage current caused by the sharp corner.

Method of etching a shallow trench

The present invention provides a method for controlling a critical dimension of shallow trench isolations in a STI etch process, comprises the following steps: before the STI etch process, pre-establishing a mapping relation between a post-etch and pre-etch critical dimension difference of a BARC layer and a thickness of the BARC layer; and during the STI etch process after coating the BARC layer, measuring the thickness of the BARC layer and determining a trimming time for a hard mask layer according to a critical dimension difference corresponding to the measured thickness in the mapping relation and a critical dimension of a photoresist pattern, then performing a trimming process for the hard mask layer lasting the trimming time to make a critical dimension of the hard mask layer equal to a required critical dimension of an active area, and etching a substrate to form shallow trenches with a predetermined critical dimension.

Method for establishing mapping relation in STI etch and controlling critical dimension of STI

A composition containing a polycarbonate, a polycarbonate-polysiloxane copolymer, an alicyclic hydrocarbon resin flow promoter, an inorganic filler, a flame retardant and an impact modifier. The compositions may include polycarbonate in an amount of 40% by weight or more of the combined weights of the polycarbonate, polycarbonate-polysiloxane copolymer, inorganic filler, flame retardant, flow promoter, and impact modifier compound wherein a molded sample of the thermoplastic composition is capable of achieving UL94 V0 rating at a thickness of 1.2 mm (&#xb1;10%); wherein the polymer composition has a melt viscosity of 185 Pa&#xb7;sec or less, when measured at 270&#xb0; C. and 1500 sec; and wherein a molded sample of the thermoplastic composition has a flexural modulus determined in accordance with ASTM D790 within 3800-8000 MPa; and wherein a 3.2-mm thick molded NII bar comprising the composition has a notched Izod impact strength of 40 to 200 J/m determined in accordance with ASTM D256 at 23&#xb0; C.

Flame-retardant reinforced polycarbonate compositions

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Shanghai, China

Yu Ren