Vlsi Technology, Inc.

Yu P Han

Samuel J Nagalingam

Ravi Jhota

Walter D Parmantie

K S Ravindhran

A method of making high performance MOSFETs uses image reversal lithography to make punchthrough implants.

High-performance punchthrough implant method for MOS/VLSI

After gates are patterned in a submicron CMOS process, a halo implant is performed with sufficient energy that the halo implant penetrates the gate structures to below the transistor channel regions. Where the substrate is not masked by gate materal, the halo implant penetrates below drain and source regions. During diffusion, this halo limits lateral diffusion of the source/drain dopants. The resulting transistor exhibits enhanced breakdown voltage characteristics during both on and off conditions.

MOSFET with gate-penetrating halo implant

The diffusion of P-type channel-stop implants into regions where P-type channels are to be formed which will connect N-type source and drain regions of a transistor element on a P-type substrate is effectively compensated for through angled implantation of an N-type dopant material into these regions. Angle implantation is performed by tilting and rotating the wafer in the presence of an N-type ion beam.

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Dallas, TX, United States of America

Yu P Han