Sony Corporation

Yu Oya

Kazuichiro Itonaga

A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.

Solid-state imaging device and camera including discrete trench isolation structure

Solid-state imaging device and camera

A solid-state imaging device is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for element isolation regions other than the shallow trench element isolation region.

Growing community of inventors

Kanagawa, Japan

Yu Oya