Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Yu Nishitani

Michihito Ueda

Yukihiro Kaneko

Takuji Tsujita

Morio Tomiyama

Satoshi Shibata

Norihito Fujinoki

Atsushi Omote

Tomoyasu Yokoyama

Hideaki Adachi

Tetsuya Asano

Ayumu Tsujimura

Yuta Sugimoto

Ryosuke Kikuchi

Shohei Kusumoto

Yumi Miyamoto

Asami Nishikawa

Kazuhide Ichikawa

Daisuke Matsunaka

An interconnect structure includes: an interconnect layer containing a metal element as a main component and extending in a direction; a metal layer opposite to the interconnect layer, and a solid electrolyte layer between the interconnect layer and the metal layer. The solid electrolyte layer encloses the interconnect layer at least in a cross-sectional view taken along a plane orthogonal to the direction. The interconnect layer and the metal layer are electrically insulated from each other by the solid electrolyte layer.

Interconnect structure of semiconductor device

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10S/cm.

Solar cell

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a first electron transport layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, the photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion, and the first electron transport layer contains a niobium oxide halide.

A secondary battery includes: a first electrode; a second electrode; a first solid electrolyte covering the first electrode, the first solid electrolyte containing an alkaline earth metal; and a liquid electrolyte filling the space between the first electrode and the second electrode, the liquid electrolyte containing a non-aqueous solvent and a salt of the alkaline earth metal dissolved in the non-aqueous solvent.

Secondary battery using alkaline earth metal ion moving during charge and discharge

A solid electrolyte has a composition represented by the formula: MgMSiO, where M represents at least one selected from the group consisting of Ti, Zr, Hf, Ca, Sr, and Ba; x satisfies 0&#x3c;x&#x3c;2; y satisfies 0&#x3c;y&#x3c;2; and z satisfies 3&#x3c;z&#x3c;6.

Solid electrolyte having magnesium ion conductivity and magnesium secondary battery using the same

A solid electrolyte comprises a compound represented by a formula MgAlMO, where M is at least one selected from the group consisting of Si, Ge, Sn, Pb, Ti, and Zr; 0&#x3c;x&#x3c;1; 0.125&#x2264;y&#x2264;0.5; and 3.8&#x2264;z&#x2264;4.1.

Solid electrolyte having magnesium ion conductivity, and magnesium secondary battery containing the same

A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P&#x2014;N bond.

Solid electrolyte containing oxynitride, and secondary battery including the solid electrolyte

A solid electrolyte has a composition represented by the formula: MgSiON, where 1&#x3c;x&#x3c;2, 3&#x3c;y&#x3c;5, and 0&#x2264;z&#x3c;1. The solid electrolyte is an amorphous material.

The present invention provides a shock recording device includes: an electric power source; a vibration energy harvester including a first electrode and a second electrode, the vibration energy harvester converting an energy of a shock applied thereto into a potential difference between the first electrode and the second electrode; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, the first transistor further including a stacked structure of a ferroelectric layer and a semiconductor layer; and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The second gate electrode is electrically connected to the first electrode. The second drain electrode is electrically connected to the electric power source. The second source electrode is electrically connected to the first gate electrode. The first source electrode is electrically connected to the second electrode.

Shock recording device

In a neural network circuit element, a neuron circuit includes a waveform generating circuit for generating an analog pulse voltage, and a switching pulse voltage which is input as a first input signal to another neural network circuit element; a synapse circuit is configured such that the analog pulse voltage generated in the neuron circuit of the neural network circuit element including the synapse circuit is input to a third terminal of a variable resistance element of the synapse circuit, for a permissible input period, in the first input signal from another neural network circuit element; and the synapse circuit is configured such that the resistance value of the variable resistance element is changed in response to an electric potential difference between a first terminal and the third terminal, which occurs depending on a magnitude of the analog pulse voltage for the permissible input period.

Neural network circuit and learning method thereof

A neural network circuit includes an error calculating circuit that generates an error voltage signal having a magnitude in accordance with a time difference between an output signal and a teaching signal corresponding to the output signal. A weight change pulse voltage signal is input to a synapse circuit of a neural network circuit element including a neuron circuit that output the weight change pulse voltage signal, and a switching pulse voltage signal is input to a synapse circuit of a neural network circuit element other than the neural network circuit element including the neuron circuit that output the switching pulse voltage signal. The neural network circuit element changes the amplitude of the weight change pulse voltage signal on the basis of the error voltage signal generated by the error calculating circuit.

Neural network circuit and learning method for neural network circuit

A random number generating device of the present disclosure includes: an arithmetic random number generator that generates an arithmetic random number sequence; an arithmetic random number converter that sequentially reads at least one arithmetic random number from the arithmetic random number sequence and converts a value of the read arithmetic random number into a voltage or current value of at least two predetermined levels of gray scale having an identical polarity; a hysteresis unit that outputs values depending on a presently-input voltage or current value and a previously-input voltage or current value with respect to the sequentially-input voltage or current value; and a threshold processor that binarizes the output of the hysteresis unit.

Random number generating device

The present invention provides a shock recording device, comprising: a vibration energy harvester comprising a first electrode and a second electrode, the vibration energy harvester converting an energy of a shock applied thereto into a potential difference between the first electrode and the second electrode; and a ferroelectric transistor comprising a gate electrode, a source electrode, and a drain electrode, the ferroelectric transistor further comprising a stacked structure of a ferroelectric layer and a semiconductor layer. The gate electrode is electrically connected to the first electrode. The source electrode is electrically connected to the second electrode. This shock recording device does not need a power source used to record a shock.

Growing community of inventors

Kyoto, Japan

Yu Nishitani