Canon Kabushiki Kaisha

Yu Nishimura

Masahiro Kobayashi

Yoshiyuki Nakagawa

Yusuke Onuki

Yasushi Matsuno

Sho Suzuki

Takashi Okagawa

Nobuyuki Hirayama

Takaaki Yamaguchi

Hiroaki Naruse

Aiko Kato

Hidenori Yamato

Seiko Minami

Keita Torii

Kyohei Kubota

Provided is a method for manufacturing a liquid ejection head substrate and a method for manufacturing a liquid ejection head capable of reducing degradation of the quality of a printed image. To this end, in formation of a liquid ejection head substrate, a part required to have more precise relative positional relation or not required to have high fabrication precision is set as a first part, and for the first part, a single-shot exposure method is employed. Also, a part required to have higher fabrication precision is set as a second part, and for the second part, a split exposure method is employed.

Method for manufacturing liquid ejection head substrate and method for manufacturing liquid ejection head

A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.

Photoelectric conversion apparatus and image pickup system

A semiconductor device manufacturing method includes a step of forming a hole reaching a first insulating layer over a first conductive member; a step of forming a trench reaching a second insulating layer and in communication with the hole; a step of forming an opening exposing the first conductive member in the hole; and a step of forming a second conductive member connected to the first conductive member by embedding a conductive material in the opening, the hole, and the trench. The trench is formed under an etching condition such that the etching rate with respect to the second insulating layer is lower than the etching rate with respect to the third insulating layer.

Semiconductor device manufacturing method, and photoelectric conversion device

Growing community of inventors

Kawasaki, Japan

Yu Nishimura