Adata Technology Co., Ltd.

Yu-Ning Lee

Tsung-Hsing Kuo

Tzu-jan Tai

Wen-Tsung Chen

A dynamic random access memory (DRAM) device is provided. The DRAM device includes a circuit substrate, a light emitting element, a first light-permeable thermal dissipation element, and a first light blocking element. At least one DRAM chip is disposed on the circuit substrate. The light emitting element is disposed on the circuit substrate and coupled to the circuit substrate. The first light-permeable thermal dissipation element is disposed on the circuit substrate. The first light blocking element is disposed between the first light-permeable thermal dissipation element and the circuit substrate, and the first light blocking element is disposed on the first light-permeable thermal dissipation element.

Growing community of inventors

Taipei, Taiwan

Yu-Ning Lee