Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Yu-Ming Lee

Chi-Ming Yang

Ying-Hsueh Changchien

Ying-Hsueh Chang Chien

Man-Kit Leung

Hung-Jui Kuo

Chin-Hsiang Lin

Ming-Che Ho

Shoji Yokoyama

Shao-Yen Ku

Chyi-Shyuan Chern

Ryoichi Enoki

Yasuhiro Tamura

Jun Sugimoto

Cheng-Hung Tsai

Tatsuya Tachibana

Simon Su-Horng Lin

Chiang-Hao Lee

Yangjian Li

Takuya Tamura

Qi Chen

Kai-Wei Yeh

A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.

Semiconductor devices employing a barrier layer

A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a metallization layer and a dielectric layer disposed on the metallization layer. The metallization layer has conductive patterns, where each of the conductive patterns includes crystal grains, the crystal grains each are in a column shape and include a plurality of first banded structures having copper atoms oriented on a (220) lattice plane.

Package structure having conductive patterns with crystal grains copper columnar shape and method manufacturing the same

A structure for attaching an ultrasound sensor to a side portion of a vehicle includes a bracket via which the ultrasound sensor is attached to face the ground under the floor of the vehicle and to be inclined at a predetermined angle with respect to the horizontal plane such that water drops adhering to the ultrasound sensor flow downward.

Structure for mounting ultrasonic sensor

A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; providing a mixture of phosphoric acid and a silicon-containing material; and delivering the mixture to the surface of the wafer to remove the silicon nitride. Single wafer etching apparatuses of selectively removing silicon nitride are also provided.

Method of selectively removing silicon nitride and single wafer etching apparatus thereof

An electro-chemical plating process begins with supplying a supercritical fluid into an electroplating solution to be deposited, and a bias is applied between a substrate and an electrode, which is located in the electroplating solution. The substrate is placed into the electroplating solution to deposit a material on the substrate.

Apparatus and process of electro-chemical plating

A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided.

Method of selectively removing silicon nitride and etching apparatus thereof

A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal. Using chemical including acidic chemical for hard mask layer removal is cheaper and the resource can be easily generated by equipment. Thus the chemical for hard mask layer removal can be drained directly and need not be recycled.

Hard mask removal scheme

A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal.

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.

Semiconductor devices and methods of manufacture thereof

The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F-] concentration greater than 0.01M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than &#x2212;1.4 volts.

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Taipei, Taiwan

Yu-Ming Lee