Epistar Corporation

Yu-Ming Kun

Chun-Lung Tseng

Chih-Tsung Su

Jar-Yu Wu

Ching-Hsing Shen

Chih-Hui Alston Liu

Keng-Lin Chuang

A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches.

Light-emitting device and method for manufacturing the same

A light-emitting element, comprises: a substrate; a light-emitting semiconductor stack over the substrate and comprising an active layer; and a Distributed Bragg reflective unit under the substrate comprising a first Distributed Bragg reflective structure under the substrate and comprising a first number of pairs of alternately stacked first sub-layers and second sub-layers, and a second Distributed Bragg reflective structure under the first Distributed Bragg reflective structure and comprising a second number of pairs of alternately stacked third sub-layers and fourth sub-layers, wherein the first number is different from the second number.

Light-emitting element comprising a reflective structure with high efficiency

Growing community of inventors

Hsinchu, Taiwan

Yu-Ming Kun