Industrial Technology Research Institute

Yu-Ming Kang

Ting-Kuo Chang

Chi-Shen Lee

Yuan-Tung Dai

Shih-Ping Lin

Pi-Fu Chen

A method for polysilicon crystallization by simultaneous laser and rapid thermal annealing is disclosed. In the method, a substrate that has an amorphous silicon layer on top is first provided and positioned on a conveyor situated inside a temperature-controlled chamber. The temperature-controlled chamber is equipped with a window in a top wall that is substantially transparent to thermal and laser energy. A beam of thermal energy and simultaneously a beam of laser energy merged with the thermal energy is then directed through the window onto a top surface of the substrate to convert an amorphous silicon film into a polysilicon film.

Method for polysilicon crystallization by simultaneous laser and rapid thermal annealing

A manufacturing method of a thin film transistor (TFT) having low serial impedance is described. The method uses a back-side exposure and uses the active area as a hard mask; therefore, photomask usage may be reduced. On the other hand, a Si-Ge layer is used to react with the conductive layer deposited thereon after for forming a Ge-salicide layer. The method may reduce the required temperature of forming a Ge-salicide layer and the serial impedance.

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Chubei, Taiwan

Yu-Ming Kang