Taiwan Semiconductor Manufacturing Comp. Ltd.

Silicon Integrated Systems Corporation

Yu-Ming Huang

Wei-Yip Loh

Hung-Hsu Chen

Yan-Ming Tsai

Chih-Wei Chang

Cheng-Wei Chang

Ken-Yu Chang

Yi-Ying Liu

Ethan Tseng

Chun-Hsien Huang

Yu-Kai Chen

Hong-Mao Lee

Yu-Wen Cheng

Yu-Shiuan Wang

Jung-Chih Tsao

Chun Che Lin

Chih-wei Chang

Chih-Chung Chang

Jian-Shin Tsai

Ruen-rone Lee

Tain-Shang Chang

Li-shu Lu

A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.

Source/drain contact formation methods and devices

Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Conductive feature formation and structure

A method includes providing a structure that includes a semiconductor substrate, an epitaxial source/drain feature over the semiconductor substrate, and one or more dielectric layers over the epitaxial source/drain feature; etching a hole into the one or more dielectric layer to expose a portion of the epitaxial source/drain feature; forming a silicide layer over the portion of the epitaxial source/drain feature; forming a conductive barrier layer over the silicide layer; and applying a plasma cleaning process to at least the conductive barrier layer, wherein the plasma cleaning process uses a gas mixture including Ngas and Hgas and is performed at a temperature that is at least 300&#xb0; C.

A semiconductor structure includes a substrate, a gate structure disposed over the substrate, a source/drain structure disposed in the substrate at two sides of the gate structure, and a conductive plug. The source/drain structure includes an epitaxial layer and a dual metal silicide on the epitaxial layer. The epitaxial layer includes a first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is greater than a lattice constant of the first semiconductor material. The dual metal silicide includes the first semiconductor material, the second semiconductor material, a first metal material and a second metal material. An atomic size of the second metal material is greater than an atomic size of the first metal material. The conductive plug penetrates the dual metal silicide.

Semiconductor structure

A method for manufacturing a semiconductor includes following steps. An epitaxial structure including a first semiconductor material and a second semiconductor material is provided. A lattice constant of the second semiconductor material is greater than a lattice constant of the first semiconductor material. A metal-containing layer is deposited on the epitaxial structure. The metal containing layer includes a first metal material and a second metal material. An atomic size of the second metal material is greater than an atomic size of the first metal material. The metal-containing layer and the epitaxial structure are annealed to form a metal silicide layer on the epitaxial structure. The metal silicide layer includes the first semiconductor material, the second semiconductor material, the first metal material, and the second metal material.

Semiconductor structure and method for manufacturing the same

A method for forming a multilayer barrier comprises forming a conductive line over a substrate, depositing a dielectric layer over the conductive line, forming a plug opening in the dielectric layer, forming a multilayer barrier through a plurality of deposition processes and corresponding plasma treatment processes.

Barrier layer and structure method

A method for removing noise regions in a stereo 3D image, which includes a first eye image and a second eye image is achieved by calculating a maximum offset value and turning a horizontal synchronization signal and a display enable signal of the CRT timing parameters.

Method for removing noise regions in stereo 3D display system

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Tainan, Taiwan

Yu-Ming Huang