Ememory Technology Inc.

Yu-Ming Hsu

Jie-Hau Huang

Hong-Ping Tsai

Wei-Ming Ku

Chong-Jen Huang

Yen-Tai Lin

Wei-Wu Liao

Chien-Hung Ho

Ling-Chang Hu

A power supply voltage switch circuit for selecting a power supply voltage of an integrated circuit according to a first control signal. The power supply voltage switch circuit contains a high voltage selecting module for generating an output voltage according to the higher of a first and a second voltages; a level shifting module electrically connected to the high voltage selecting module to receive the output voltage as power supply, for performing level shifting to a first control signal according to the output voltage; and a selecting switch module electrically connected to the level shifting module for selectively outputting the first or the second voltage as the power supply voltage of the integrated circuit according to the level-shifted first control signal.

Power supply voltage switch circuit

A delay circuit and related apparatus for providing a longer delay time, such that when a level of an input signal changes, a level of an output signal changes accordingly after the predetermined delay time. The delay circuit has a storage unit, a current generator, a voltage generator for providing a reference voltage, a differential amplifier, and a feedback control module. The current generator starts to provide a charging current to the storage unit when the input signal changes level, such that an output charging voltage of the storages unit is gradually charged to reach the reference voltage. The feedback control module is capable of dynamically decreasing the charging current provided to the storage unit as the charging voltage is approaching the reference voltage, and the amplifier will change the level of the output voltage when the charging voltage reaches the reference voltage.

Delay circuits and related apparatus for extending delay time by active feedback elements

An option fuse circuit, which can be viewed as a latch-type option fuse circuit, is manufactured with a standard single-poly CMOS manufacturing process. The option fuse circuit includes a non-volatile memory module for storing a logic bit in a data program status, a data control circuit electrically connected to the non-volatile memory module for controlling operations of the option fuse circuit, and an output circuit electrically connected to the data control circuit for outputting the logic data bit in a data read status.

Pure CMOS latch-type fuse circuit

A memory including a plurality of memory cells, a sensing load, a reference load, a control circuit and a comparator. Each of the memory cells can store a bit data and provide a driving current according to the bit data. The sensing load is driven by the driving current and a driving voltage to generate a sensing voltage, and the reference load is driven by the driving voltage to generate a reference voltage. The control circuit can control the driving voltage to drive the sensing load or the reference load such that the sensing voltage or the reference voltage is kept constant while the driving current changes. The comparator is for comparing the sensing voltage with the reference voltage and therefore determining the bit data stored in the memory cell that provides the driving current.

Flash memory with sensing amplifier using load transistors driven by coupled gate voltages

A device and method for data sensing includes turning off a first and a second program switches while turning on a first and a second switches in order to output a first current corresponding to a first data from a first memory cell to a biasing circuit, also to output a second current corresponding to a second data from the biasing circuit to a second memory cell, and to charge or discharge a loading node using a difference of the first and the second currents to sense a loading voltage.

Data sensing method used in a memory cell circuit

A non-volatile memory unit includes memory units for providing a data current corresponding to stored data; a first load unit having a first end; a second load unit having a second end; and a sensing unit. The first load unit and the second load unit can receive current input to build voltages respectively at the first end and the second end. When the memory unit provides the data current, the second load unit is enabled such that the data current inputs into the first load unit and the second load unit; then the second load is disabled after a predetermined time such that the data current inputs into the first load unit only, and the sensing unit generates a data signal for data-acquisition according to a voltage difference between the voltage at the first end and a reference voltage.

Flash memory with accelerated transient state transitions

A word line driver includes an address decoder having a first circuit and a second circuit for selecting the word line, and a control end disposed between the first circuit and the second circuit. In addition, the word line driver has a level shift circuit for shifting a voltage level of the word line, and the level shift circuit has an input end connected to the second circuit of the address decoder. A method of driving a word line includes shifting a voltage level of the control end while turning on the second circuit so as to shift a voltage level of the input end of the level shift circuit, and shifting a voltage level of at least one of the first and second power supplies and using the second circuit to isolate the voltage level of the control end from the voltage level of the word line.

Growing community of inventors

Hsin-Chu, Taiwan

Yu-Ming Hsu